General Description [1]

The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected.

See the Truth Table in this data sheet for a complete description of read and write modes.

The CY7C194BN is available in 24 DIP, 24 SOJ package(s).

Features

• Fast access time: 15 ns and 25 ns

• Wide voltage range: 5.0V ± 10 (4.5V to 5.5V)

• CMOS for optimum speed/power

• TTL-compatible inputs and outputs

• CY7C194BN is available in 24 DIP, 24 SOJ packages.