位置:首页 > IC中文资料 > CY7C166

CY7C166价格

参考价格:¥2033.0186

型号:CY7C1663KV18-450BZXC 品牌:Cynergy 3 备注:这里有CY7C166多少钱,2026年最近7天走势,今日出价,今日竞价,CY7C166批发/采购报价,CY7C166行情走势销售排行榜,CY7C166报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY7C166

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C166

16K x 4 Static RAM

文件:266.19 Kbytes Page:9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

Functional Description The CY7C1663KV18, and CY7C1665KV18 are 1.8-V synchronous pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

Functional Description The CY7C1663KV18, and CY7C1665KV18 are 1.8-V synchronous pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

Functional Description The CY7C1663KV18, and CY7C1665KV18 are 1.8-V synchronous pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

Functional Description The CY7C1663KV18, and CY7C1665KV18 are 1.8-V synchronous pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

文件:266.19 Kbytes Page:9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

文件:266.19 Kbytes Page:9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:165-LBGA 包装:托盘 描述:IC SRAM 144MBIT PARALLEL 165FBGA 集成电路(IC) 存储器

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:165-LBGA 包装:托盘 描述:IC SRAM 144MBIT PARALLEL 165FBGA 集成电路(IC) 存储器

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

同步 SRAM

INFINEON

英飞凌

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

INFINEON

英飞凌

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

文件:771.58 Kbytes Page:30 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

文件:771.58 Kbytes Page:30 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

双倍数据速率 (DDR) 同步 SRAM

INFINEON

英飞凌

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

文件:771.58 Kbytes Page:30 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C166产品属性

  • 类型

    描述

  • 合格汽车:

  • 突发长度(字):

    4

  • 密度 (Kb):

    147456

  • Density (Mb):

    144

  • 频率 (MHz):

    550

  • 最高工作温度 (°C):

    70

  • Max. Operating VCCQ (V):

    1.90

  • 最高工作电压 (V):

    1.90

  • 最低工作温度 (°C):

    0

  • Min. Operating VCCQ (V):

    1.40

  • 最低工作电压 (V):

    1.70

  • 组织 (X x Y):

    8Mb x 18

  • Part Family:

    QDR-II+

  • Tape & Reel:

  • 温度分类:

    商用

更新时间:2026-5-14 15:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
22+
DIP
8000
原装正品支持实单
CYPRESS/赛普拉斯
2025+
SOJ
5000
原装进口价格优 请找坤融电子!
CY
25+
DIP
3200
全新原装、诚信经营、公司现货销售!
CYRESS
20+
SOP
2960
诚信交易大量库存现货
CYPRESS
26+
DIP
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
CYPRESS
原厂封装
9800
原装进口公司现货假一赔百
CYPRESS
2023+
SOJ
50000
原装现货
CYP
9615
DIP
557
原装正品
CY
SOJ24
92+
11
全新原装进口自己库存优势
CYPRESS/赛普拉斯
2403+
SOJ
11809
原装现货!欢迎随时咨询!

CY7C166数据表相关新闻