CY7C164价格

参考价格:¥1867.4649

型号:CY7C1643KV18-400BZC 品牌:Cynergy 3 备注:这里有CY7C164多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C164批发/采购报价,CY7C164行情走势销售排行榜,CY7C164报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CY7C164

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

CY7C164

16K x 4 Static RAM

文件:266.19 Kbytes Page:9 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

Functional Description The CY7C1648KV18, and CY7C1650KV18 are 1.8-V synchronous pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Features ■ 144-Mbit density (8 M × 18, 4 M × 36) ■ 450-MHz clock for high ban

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

Functional Description The CY7C1648KV18, and CY7C1650KV18 are 1.8-V synchronous pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Features ■ 144-Mbit density (8 M × 18, 4 M × 36) ■ 450-MHz clock for high ban

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

文件:266.19 Kbytes Page:9 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

文件:266.19 Kbytes Page:9 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

16K x 4 Static RAM

文件:266.19 Kbytes Page:9 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

文件:861.72 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

文件:861.72 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

文件:861.72 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:165-LBGA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC SRAM 144MBIT PARALLEL 165FBGA 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:165-LBGA 包装:托盘 描述:IC SRAM 144MBIT PARALLEL 165FBGA 集成电路(IC) 存储器

ETC

知名厂家

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

文件:861.72 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

文件:861.72 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

文件:861.72 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

文件:861.72 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

文件:861.72 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

文件:857.34 Kbytes Page:30 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

文件:857.34 Kbytes Page:30 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

5V 8K X 8 CMOS SRAM

Function description The AS7C164 is a high performance CMOS 65,536-bit Static Random Access Memory (SRAM) device organized as 8,192 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C164 (5V version) • Co

ALSC

Fully static operation

GENERAL DESCRIPTION The AS7C164A is a 65,536-bit high speed CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES ■ Fa

ALSC

8K X 8 BIT HIGH SPEED CMOS SRAM

文件:459.71 Kbytes Page:10 Pages

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CY7C164产品属性

  • 类型

    描述

  • 型号

    CY7C164

  • 制造商

    Cypress Semiconductor

更新时间:2025-8-17 13:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
ROHS+Original
NA
1221
专业电子元器件供应链/QQ 350053121 /正纳电子
Cypress(赛普拉斯)
2324+
NA
78920
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口
Cypress(赛普拉斯)
2021/2022+
N/A
6000
原厂原装现货订货价格优势终端BOM表可配单提供样品
CYPRESS/赛普拉斯
2406+
SOJ
1850
诚信经营!进口原装!量大价优!
Cypress Semiconductor Corp
21+
256-LBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
CYPRESS
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
Cypress(赛普拉斯)
2511
N/A
6000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
CYP
23+
PLCC32
9526
CYPRESS
23+
BGA
3050
市场最低 原装现货 假一罚百 可开原型号
CYPRESS/赛普拉斯
23+
BGA-165
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、

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