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CY7C164价格
参考价格:¥1867.4649
型号:CY7C1643KV18-400BZC 品牌:Cynergy 3 备注:这里有CY7C164多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C164批发/采购报价,CY7C164行情走势销售排行榜,CY7C164报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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CY7C164 | 16K x 4 Static RAM Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | ||
CY7C164 | 16K x 4 Static RAM 文件:266.19 Kbytes Page:9 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | ||
16K x 4 Static RAM Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW • | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Functional Description The CY7C1648KV18, and CY7C1650KV18 are 1.8-V synchronous pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Features ■ 144-Mbit density (8 M × 18, 4 M × 36) ■ 450-MHz clock for high ban | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) Functional Description The CY7C1648KV18, and CY7C1650KV18 are 1.8-V synchronous pipelined SRAMs equipped with DDR II+ architecture. The DDR II+ consists of an SRAM core with advanced synchronous peripheral circuitry. Features ■ 144-Mbit density (8 M × 18, 4 M × 36) ■ 450-MHz clock for high ban | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM 文件:266.19 Kbytes Page:9 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM 文件:266.19 Kbytes Page:9 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
16K x 4 Static RAM 文件:266.19 Kbytes Page:9 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 文件:861.72 Kbytes Page:31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 文件:861.72 Kbytes Page:31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 文件:861.72 Kbytes Page:31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
封装/外壳:165-LBGA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC SRAM 144MBIT PARALLEL 165FBGA 集成电路(IC) 存储器 | ETC 知名厂家 | ETC | ||
封装/外壳:165-LBGA 包装:托盘 描述:IC SRAM 144MBIT PARALLEL 165FBGA 集成电路(IC) 存储器 | ETC 知名厂家 | ETC | ||
144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 文件:861.72 Kbytes Page:31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 文件:861.72 Kbytes Page:31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 文件:861.72 Kbytes Page:31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 文件:861.72 Kbytes Page:31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit QDR짰 II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 文件:861.72 Kbytes Page:31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 文件:857.34 Kbytes Page:30 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
144-Mbit DDR II SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) 文件:857.34 Kbytes Page:30 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
5V 8K X 8 CMOS SRAM Function description The AS7C164 is a high performance CMOS 65,536-bit Static Random Access Memory (SRAM) device organized as 8,192 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C164 (5V version) • Co | ALSC | |||
Fully static operation GENERAL DESCRIPTION The AS7C164A is a 65,536-bit high speed CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES ■ Fa | ALSC | |||
8K X 8 BIT HIGH SPEED CMOS SRAM 文件:459.71 Kbytes Page:10 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |
CY7C164产品属性
- 类型
描述
- 型号
CY7C164
- 制造商
Cypress Semiconductor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CYPRESS |
ROHS+Original |
NA |
1221 |
专业电子元器件供应链/QQ 350053121 /正纳电子 |
|||
Cypress(赛普拉斯) |
2324+ |
NA |
78920 |
二十余载金牌老企,研究所优秀合供单位,您的原厂窗口 |
|||
Cypress(赛普拉斯) |
2021/2022+ |
N/A |
6000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
CYPRESS/赛普拉斯 |
2406+ |
SOJ |
1850 |
诚信经营!进口原装!量大价优! |
|||
Cypress Semiconductor Corp |
21+ |
256-LBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
CYPRESS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Cypress(赛普拉斯) |
2511 |
N/A |
6000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
CYP |
23+ |
PLCC32 |
9526 |
||||
CYPRESS |
23+ |
BGA |
3050 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
CYPRESS/赛普拉斯 |
23+ |
BGA-165 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
CY7C164规格书下载地址
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