Fully static operation

GENERAL DESCRIPTION The AS7C164A is a 65,536-bit high speed CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES ■ Fa

8K X 8 BIT HIGH SPEED CMOS SRAM

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5V 8K X 8 CMOS SRAM

Function description The AS7C164 is a high performance CMOS 65,536-bit Static Random Access Memory (SRAM) device organized as 8,192 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C164 (5V version) • Co

封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：托盘托盘 描述：IC SRAM 64KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：托盘 描述：IC SRAM 64KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

16K x 4 Static RAM

Functional Description The CY7C164 and CY7C166 are high-performance CMOS static RAMs organized as 16,384 by 4 bits. Features • High speed — 15 ns • Output enable (OE) feature (CY7C166) • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 110 mW •

16K x 4 Static RAM

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