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型号	功能描述	生产厂家企业	LOGO
CY7C1382C	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C	18-Mb (512K x 36/1M x 18) Pipelined SRAM	INFINEON 英飞凌	INFINEON
CY7C1382CV25	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167AI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167BGI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167BZI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-200AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-200AI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-200BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-200BGI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-200BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-200BZI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-225AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-225AI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-225BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-225BGI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-225BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-225BZI	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-250AC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-250BGC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-250BZC	512K x 36/1M x 18 Pipelined SRAM Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-167AC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-167AC	封装/外壳：100-LQFP 包装：管件描述：IC SRAM 18MBIT PARALLEL 100TQFP 集成电路（IC）存储器	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-167AI	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-167BGC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-167BGI	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-167BZC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-167BZI	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-200AC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-200BGC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-200BZC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-225AC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-225BGC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-225BZC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-250AC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-250BGC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382C-250BZC	18-Mb (512K x 36/1M x 18) Pipelined SRAM 文件：788.82 Kbytes Page：36 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25	512K x 36/1M x 18 Pipelined SRAM	INFINEON 英飞凌	INFINEON
CY7C1382CV25	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167AI	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167BGI	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-167BZI	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-200AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-200BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-200BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-225AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-225BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-225BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-250AC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-250BGC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382CV25-250BZC	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：510.23 Kbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382B	512K x 36/1M x 18 Pipelined SRAM 文件：841.92 Kbytes Page：34 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382D	18-Mbit (512 K 횞 36/1 M 횞 18) Pipelined SRAM 文件：1.17409 Mbytes Page：33 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1382D	18-Mbit (512K x 36/1M x 18) Pipelined SRAM 文件：1.23716 Mbytes Page：30 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS

CY7C1382C产品属性

类型
描述
型号
CY7C1382C
功能描述
IC SRAM 18MBIT 167MHZ 100LQFP
RoHS
否
类别
集成电路(IC) >> 存储器
系列
-
标准包装
96
系列
- 格式 -
存储器
闪存
存储器类型
FLASH
存储容量
16M（2M x 8，1M x 16）
速度
70ns
接口
并联
电源电压
2.65 V ~ 3.6 V
工作温度
-40°C ~ 85°C
封装/外壳
48-TFSOP（0.724，18.40mm 宽）
供应商设备封装
48-TSOP
包装
托盘

CY7C1382C供应商更多...

更新时间：2026-8-4 14:43:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	CY7C1382C167AC	Cypress	22+	100TQFP (14x20)	9000	原厂渠道,现货配单	询价
贸泽芯城（深圳）电子科技有限公司	CY7C1382C-167AI	CYPREES	23+	TQFP100	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市一线半导体有限公司	CY7C1382C-167AC	NEC	24+	DIP16	408		询价
深圳市芯亿发电子科技有限公司	CY70241-25AC	CYPRESS/赛普拉斯	26+	QFP	20000	公司只有正品,实单来谈	询价
深圳市毅创腾电子科技有限公司	CY7C1382C-167AC	Cypress	23+	100-LQFP(14x20)	9550	专业分销产品!原装正品!价格优势!	询价
瀚佳科技(深圳)有限公司	CY7C1382C-167AC	Cypress Semiconductor Corp	24+	100-TQFP(14x20)	56200	一级代理/放心采购	询价
深圳市华康联电子科技有限公司	CY70241-25AC	CYPRESS/赛普拉斯	23+	QFP	98900	原厂原装正品现货!!	询价
深圳市胜彬电子有限公司	CY70291A-35WMB	CYPRESS	22+	CDIP-24	8000	原装正品支持实单	询价
深圳市能元时代电子有限公司	CY70823V-133AI	CYPRESS	23+	14+	25827	公司原装现货!主营品牌!可含税欢迎查询	询价
深圳市卓越微芯电子有限公司	CY701318V18	CY	25+	BGA	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价

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找IC，尽在114IC

CY7C1382C产品属性

CY7C1382C供应商更多...

CY7C1382C芯片相关品牌

CY7C1382C规格书下载地址

CY7C1382C参数引脚图相关

CY7C1382C数据表相关新闻

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