型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1382C

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

Functional Description The Cypress Synchronous Burst SRAM family employs high speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. Each memory cell consists of six transistors. Features • Fast clock speed: 250, 225, 200, 167 MHz • Provide high-p

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:100-LQFP 包装:管件 描述:IC SRAM 18MBIT PARALLEL 100TQFP 集成电路(IC) 存储器

ETC

知名厂家

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mb (512K x 36/1M x 18) Pipelined SRAM

文件:788.82 Kbytes Page:36 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:510.23 Kbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

512K x 36/1M x 18 Pipelined SRAM

文件:841.92 Kbytes Page:34 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512 K 횞 36/1 M 횞 18) Pipelined SRAM

文件:1.17409 Mbytes Page:33 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:1.23716 Mbytes Page:30 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

18-Mbit (512K x 36/1M x 18) Pipelined SRAM

文件:469.26 Kbytes Page:29 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1382C产品属性

  • 类型

    描述

  • 型号

    CY7C1382C

  • 功能描述

    IC SRAM 18MBIT 167MHZ 100LQFP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    96

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    FLASH

  • 存储容量

    16M(2M x 8,1M x 16)

  • 速度

    70ns

  • 接口

    并联

  • 电源电压

    2.65 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

更新时间:2025-8-19 8:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CY
2020+
LQFP
940
百分百原装正品 真实公司现货库存 本公司只做原装 可
CYPRESS(赛普拉斯)
24+
LBGA165
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
CYPRESS
23+
QFP100
8560
受权代理!全新原装现货特价热卖!
Cypress(赛普拉斯)
24+
NA/
8735
原厂直销,现货供应,账期支持!
CYPRESS/赛普拉斯
25+
QFP
638
原装正品,假一罚十!
最新
2000
原装正品现货
CYPRESS
21+
TQFP100
216
原装现货假一赔十
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
CYPRESS/赛普拉斯
2021+
1218
十年专营原装现货,假一赔十
Cypress Semiconductor Corp
25+
100-LQFP
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

CY7C1382C数据表相关新闻