CY7C1363价格

参考价格:¥63.4391

型号:CY7C1363C-133AJXC 品牌:Cynergy 3 备注:这里有CY7C1363多少钱,2024年最近7天走势,今日出价,今日竞价,CY7C1363批发/采购报价,CY7C1363行情走势销售排行榜,CY7C1363报价。
型号 功能描述 生产厂家&企业 LOGO 操作

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1363产品属性

  • 类型

    描述

  • 型号

    CY7C1363

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 7ns 100-Pin TQFP

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2024-9-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS(赛普拉斯)
23+
BGA119
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
CYPRESS/赛普拉斯
24+
SOIC16
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
CYPRESS
22+23+
BGA
24144
绝对原装正品全新进口深圳现货
Cypress
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
CYPRESS
06/07+
QFP
78
CY/超音
2023+
QFP100
8635
一级代理优势现货,全新正品直营店
CY7C1363B-133AC
23
23
CypressSemiconductorCorp
2022
ICSRAM9MBIT117MHZ100LQFP
5058
原厂原装正品,价格超越代理
CYPRESS/赛普拉斯
2122+
BGA
9890
全新原装进口,优势渠道,价格美丽,可出样品来电咨询
Cypress
22+
QFP-100
10000
原装正品优势现货供应

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