CY7C1363价格

参考价格:¥63.4391

型号:CY7C1363C-133AJXC 品牌:Cynergy 3 备注:这里有CY7C1363多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1363批发/采购报价,CY7C1363行情走势销售排行榜,CY7C1363报价。
型号 功能描述 生产厂家&企业 LOGO 操作

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361C/CY7C1363Cisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounter

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1363产品属性

  • 类型

    描述

  • 型号

    CY7C1363

  • 制造商

    Cypress Semiconductor

更新时间:2025-6-25 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS(赛普拉斯)
24+
BGA119
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
CY/超音
24+
NA/
3278
原装现货,当天可交货,原型号开票
CYPRESS/赛普拉斯
25+
65248
百分百原装现货 实单必成
Cypress
QFP100
6200
Cypress一级分销,原装原盒原包装!
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
CYPRESS
25+23+
BGA
24144
绝对原装正品全新进口深圳现货
CYRESS
24+
TQFP
6980
原装现货,可开13%税票
CYPRESS
24+
QFP
78
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
CYPRESS/赛普拉斯
24+
QFP
28131
只做原装 公司现货库存

CY7C1363芯片相关品牌

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