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位置：首页 > IC中文资料第3567页 > CY7C1363A

型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1363A

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-100AC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-100AI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-100AJC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-100AJI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-100BGC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-100BGI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-117AC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-117AI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-117AJC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-117AJI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-117BGC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-117BGI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-133AC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-133AI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-133AJC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-133AJI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-133BGC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-133BGI

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-150AC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-150AJC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363A-150BGC

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363B

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363C

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

文件：1.10773 Mbytes Page：32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363C

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

文件：567.48 Kbytes Page：31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress
CY7C1363C

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

文件：517.01 Kbytes Page：31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1363A产品属性

  • 类型

    描述

  • 型号

    CY7C1363A

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 8ns 100-Pin TQFP

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

CY7C1363A供应商更多...

更新时间：2025-6-26 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华斯顿科技有限公司
CY7C1363A-117AC
CYPRESS
25+23+
TQFP
23287
绝对原装正品现货,全新深圳原装进口现货
询价
深圳市益百分电子有限公司
CY7C1363A-133AJC
CY
02+
QFP100
4200
全新原装进口自己库存优势
询价
华富测量(深圳)传感技术有限公司
CY7C1363A-117AJC
CYPRESS
2138+
QFP
8960
专营BGA,QFP原装现货,假一赔十
询价
深圳市恒达亿科技有限公司
CY7C1363A-133AC
CYPRES
23+
QFP
4500
全新原装、诚信经营、公司现货销售!
询价
深圳市冠亿通科技有限公司
CY7C1363A-133ACT
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市毅创腾电子科技有限公司
CY7C1363A-133AC
Cypress
SMD/DIP
350
Cypress一级分销,原装原盒原包装!
询价
标准国际(香港)有限公司
CY7C1363A-117AC
CY7C1363A-117AC
138
138
询价
深圳市科恒伟业电子有限公司
CY7C1363A-133AJC
CYPRESS
1836+
QFP100
9852
只做原装正品现货!或订货假一赔十!
询价
深圳市金华微盛电子有限公司
CY7C1363A-133AJC
CYPRESS
19+
QFP100
23000
询价
深圳市百诺芯科技有限公司
CY7C1363A-117AC
CYPRESS/赛普拉斯
23+
NA
1218
原装正品代理渠道价格优势
询价

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