型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1363A

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx36/512Kx18SynchronousFlow-ThruBurstSRAM

FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors. Features •Fastaccesstimes:6.0,6.5

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

FunctionalDescription[1] TheCY7C1361B/CY7C1363Bisa3.3V,256Kx36and512Kx18SynchronousFlowthroughSRAMs,respectivelydesignedtointerfacewithhigh-speedmicroprocessorswithminimumgluelogic.Maximumaccessdelayfromclockriseis6.5ns(133-MHzversion).A2-biton-chipcounte

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

文件:1.10773 Mbytes Page:32 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

文件:567.48 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

9-Mbit(256Kx36/512Kx18)Flow-ThroughSRAM

文件:517.01 Kbytes Page:31 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1363A产品属性

  • 类型

    描述

  • 型号

    CY7C1363A

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 8ns 100-Pin TQFP

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2024-6-16 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS(赛普拉斯)
23+
LQFP100
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
CYPRESS/赛普拉斯
24+
QFP
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
CYPRESS
21+
QFP
35200
一级代理/放心采购
CYPRESS
1836+
QFP100
9852
只做原装正品现货!或订货假一赔十!
CYPRESS/赛普拉斯
23+
QFP100
90000
只做原厂渠道价格优势可提供技术支持
CYPRESS
22+23+
TQFP
23287
绝对原装正品现货,全新深圳原装进口现货
CYPRESS
QFP100
68900
原包原标签100%进口原装常备现货!
CYPRES
23+
QFP
4500
全新原装、诚信经营、公司现货销售!
Cypress
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
CY7C1363A-117AC
138
138

CY7C1363A芯片相关品牌

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