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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CY7C1362A | 256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 |  |   |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
256Kx36/512Kx18SynchronousPipelinedBurstSRAM FunctionalDescription TheCypressSynchronousBurstSRAMfamilyemployshigh-speed,low-powerCMOSdesignsusingadvancedtriple-layerpolysilicon,double-layermetaltechnology.Eachmemorycellconsistsoffourtransistorsandtwohigh-valuedresistors.TheCY7C1360AandCY7C1362ASRAMsinte | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM FunctionalDescription TheCY7C1360C/CY7C1362CSRAMintegrates262,144x36and524,288x18SRAMcellswithadvancedsynchronousperipheralcircuitryandatwo-bitcounterforinternalburstoperation.Allsynchronousinputsaregatedbyregisterscontrolledbyapositive-edge-triggeredClock | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | | |
9-Mbit(256Kx36/512Kx18)PipelinedSRAM 文件：521.48 Kbytes Page：31 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY7C1362A产品属性
- 类型
描述
- 型号
CY7C1362A
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Cypress Semiconductor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS(赛普拉斯) |
24+ |
BGA119 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
CYPRESS/赛普拉斯 |
24+ |
TSOP |
6618 |
公司现货库存,支持实单 |
|||
CYPRESS/赛普拉斯 |
25+ |
QFP |
54815 |
百分百原装现货,实单必成,欢迎询价 |
|||
CYPRESS/赛普拉斯 |
23+ |
QFP-100L |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
CYPRESS |
21+ |
QFP |
5 |
原装现货假一赔十 |
|||
CYPRESS/赛普拉斯 |
23+ |
QFP |
6500 |
专注配单,只做原装进口现货 |
|||
CY |
24+ |
TQFP100 |
14 |
||||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
Cypress |
QFP |
1200 |
Cypress一级分销,原装原盒原包装! |
||||
CY |
2138+ |
QFP |
8960 |
专营BGA,QFP原装现货,假一赔十 |
CY7C1362A芯片相关品牌
CY7C1362A规格书下载地址
CY7C1362A参数引脚图相关
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CY7C1362A数据表相关新闻
CY7C1329H-133AXC
CY7C1329H-133AXC
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2020-7-15CY7C1370D-167AXI产品资料 CYPRESS/赛普拉斯
CY7C1370D-167AXI产品资料
2020-6-28CY7C1350G-133AXC公司原装现货/长期供应
全新原装
2019-3-30CY7C1354C-166AXI公司原装现货/长期供应
全新原装
2019-3-30
DdatasheetPDF页码索引
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