CY7C1041B价格

参考价格:¥48.2285

型号:CY7C1041BN-20ZSXA 品牌:Cynergy 3 备注:这里有CY7C1041B多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1041B批发/采购报价,CY7C1041B行情走势销售排行榜,CY7C1041B报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1041B

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1041B

256K x 16 Static RAM

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CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1041B

256K x 16 Static RAM

Infineon

英飞凌

256K x 16 Static RAM

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CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041B is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 1540 mW (max.) • Low CMOS standby power (L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Aut

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. Features ■Temperature ranges ❐Commercial: 0 °C to 70 °C ❐Industrial: –40 °C to 85 °C ❐Automotive-A: –40 °C to 85 °C ■High speed ❐tAA= 15 ns ■Low active po

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed — tAA = 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1041B产品属性

  • 类型

    描述

  • 型号

    CY7C1041B

  • 制造商

    Cypress Semiconductor

  • 功能描述

    4MB(256K X 16)- FAST ASYNCH SRAM - Trays

更新时间:2025-10-20 17:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CY
20+
SOJ
6532
英卓尔原装现货!0755-82566558真实库存!
CYPRESS
18+
TSOP44
12500
全新原装正品,本司专业配单,大单小单都配
CYPRESS
2016+
SOJ-44
3000
只做原装,假一罚十,公司可开17%增值税发票!
CYPRESS
2014+
3607
公司原装现货常备库存!
CYP
2023+
QFP
53500
正品,原装现货
CYPRESS
2023+
TSOP-44
3000
进口原装现货
CYPRESS/赛普拉斯
24+
NA
2200
只做原装正品现货 欢迎来电查询15919825718
CYPRESS
24+
TSSOP
3623
CYPRESS专营全新原装现货
CRYESS
25+
TSOP
880000
明嘉莱只做原装正品现货
CY
25+
TSOP
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可

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