型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1041BV33

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

256Kx16StaticRAM

TheCY7C1041BV33isahigh-performanceCMOSStaticRAMorganizedas262,144wordsby16bits. Features •Highspeed —tAA=12ns •Lowactivepower —612mW(max.) •LowCMOSstandbypower(CommercialLversion) —1.8mW(max.) •2.0VDataRetention(600µWat2.0Vretention) •Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1041BV33产品属性

  • 类型

    描述

  • 型号

    CY7C1041BV33

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    4MB(256K X 16)- FAST ASYNCH SRAM - Bulk

更新时间:2025-6-25 16:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
24+
SOJ44
12000
原装
CYPRESS
22+
TSOP
2000
原装正品现货
CYPRESS/赛普拉斯
/ROHS.original
原封
22102
电子元件,供应 -正纳电子/ 元器件IC -MOS -MCU.
CYPRESS/赛普拉斯
24+
NA
2200
只做原装正品现货 欢迎来电查询15919825718
Cypress(赛普拉斯)
21+
TSOP44
30000
只做原装,质量保证
N/A
17+
NEW
6200
100%原装正品现货
CYPRESS
05+
原厂原装
4376
只做全新原装真实现货供应
CY7C1041BV33-25ZCT
153
153
CYPRESS
2023+
TSOP-44
5800
进口原装,现货热卖
CYPRESS
2023+
TSOP-44
3000
进口原装现货

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