型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1041BV33

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1041BV33

256K x 16 Static RAM

Infineon

英飞凌

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1041BV33产品属性

  • 类型

    描述

  • 型号

    CY7C1041BV33

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    4MB(256K X 16)- FAST ASYNCH SRAM - Bulk

更新时间:2025-12-19 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Cypress(赛普拉斯)
24+
NA/
8735
原厂直销,现货供应,账期支持!
CYRESS
20+
SSOP
2960
诚信交易大量库存现货
CY
25+
DIP-16
18000
原厂直接发货进口原装
CY7C1041BV33-25ZCT
25+
153
153
CYPRESS
07+
TSSOP44
24
原装现货海量库存欢迎咨询
CYPRESS/赛普拉斯
24+
NA
2200
只做原装正品现货 欢迎来电查询15919825718
CYPRESS
18+
TSOP44
12500
全新原装正品,本司专业配单,大单小单都配
CYPRESS
2138+
原厂标准封装
8960
代理CYPRESS全系列芯片,原装现货
CYPRESS
2450+
TSOP44
6540
只做原厂原装正品终端客户免费申请样品
CYPRESS
25+
TSOP44
3000
全新原装、诚信经营、公司现货销售!

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