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型号	功能描述	生产厂家企业	LOGO
CY7C1041BV33	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33	256K x 16 Static RAM	INFINEON 英飞凌	INFINEON
CY7C1041BV33-12	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-12VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-12ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-15VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-15VI	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-15ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-15ZI	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-17VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-17VI	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-17ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-17ZI	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-20VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-20VI	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-20ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-20ZI	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-25VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-25VI	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-25ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33-25ZI	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-12VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-12ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-15VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-15ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-17VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-17ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-20VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-20ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-25VC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1041BV33L-25ZC	256K x 16 Static RAM The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS

CY7C1041BV33产品属性

类型
描述
型号
CY7C1041BV33
制造商
Cypress Semiconductor
功能描述
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ
制造商
Rochester Electronics LLC
功能描述
4MB(256K X 16)- FAST ASYNCH SRAM - Bulk

CY7C1041BV33供应商更多...

更新时间：2026-3-17 21:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
标准国际(香港)有限公司	CY7C1041BV33-25ZCT	CY7C1041BV33-25ZCT	25+	153	153		询价
深圳市富芯乐电子科技有限公司	CY7C1041BV33-15ZC	CYPRESS/赛普拉斯	24+	NA	2200	只做原装正品现货欢迎来电查询15919825718	询价
深圳市欧立现代科技有限公司	CY7C1041BV33L12ZC	cyp	24+	N/A	6980	原装现货,可开13%税票	询价
深圳市佳鑫美电子科技有限公司	CY7C1041BV33-1	CYPRESS	25+	TSOP	2789	原装优势!绝对公司现货!	询价
深圳市福田区绿盛电子商行	CY7C1041BV33-20VI	CRYESS	2015+	SOJ	19889	一级代理原装现货,特价热卖!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	CY7C1041BV33-15ZC	CY	26+	DIP-16	890000	一级总代理商原厂原装大批量现货一站式服务	询价
深圳市科恒伟业电子有限公司	CY7C1041BV33-12ZC	CYPRESS	2450+	TSOP44	6540	只做原厂原装正品终端客户免费申请样品	询价
深圳市卓越微芯电子有限公司	CY7C1041BV33-12EC		25+	SOP	337	百分百原装正品真实公司现货库存本公司只做原装可	询价
华富测量(深圳)传感技术有限公司	CY7C1041BV33-15VI	CYPRESS	2138+	原厂标准封装	8960	代理CYPRESS全系列芯片,原装现货	询价
深圳市胜彬电子有限公司	CY7C1041BV33L-15VC	CYPRESS	22+	SOJ	8000	原装正品支持实单	询价

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CY7C1041BV33数据表相关新闻

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2022-10-8
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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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可立即发货
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CY7C1041CV33-10ZXI ，全新原装当天发货或门市自取0755-82732291.
2019-8-25

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CY7C1041BV33产品属性

CY7C1041BV33供应商更多...

CY7C1041BV33芯片相关品牌

CY7C1041BV33规格书下载地址

CY7C1041BV33参数引脚图相关

CY7C1041BV33数据表相关新闻

CY7C1041GN30-10ZSXIT

CY7C1041GN30-10ZSXIT-艾飞琪电子-只做原装原厂渠道-原厂代理

CY7C1021DV33-10ZSXIT

CY7C1021DV33-10ZSXIT

CY7C1021BV33-128AI全新原装现货

CY7C1041CV33-10ZXI

DdatasheetPDF页码索引