型号 功能描述 生产厂家&企业 LOGO 操作
CY7C1041BV33

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

The CY7C1041BV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. Features • High speed —tAA= 12 ns • Low active power — 612 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (600 µW at 2.0V retention) • Au

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1041BV33产品属性

  • 类型

    描述

  • 型号

    CY7C1041BV33

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    4MB(256K X 16)- FAST ASYNCH SRAM - Bulk

更新时间:2025-8-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Cypress(赛普拉斯)
24+
NA/
8735
原厂直销,现货供应,账期支持!
CYPRESS/赛普拉斯
25+
TSSOP44
680
原装正品,假一罚十!
CY
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
CY
131
*
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CYPRESS
22+
TSOP
8000
原装正品支持实单
Cypress(赛普拉斯)
21+
TSOP44
30000
只做原装,质量保证
CYPRESS
25+
TSOP44
3000
全新原装、诚信经营、公司现货销售!
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
CY7C1041BV33-25ZCT
153
153
CYPRESS
22+
TSOP
2000
原装正品现货

CY7C1041BV33数据表相关新闻