型号 功能描述 生产厂家 企业 LOGO 操作

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

64K x 16 Static RAM

Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW (max.) • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (64K x 16) Static RAM

Functional Description[1] The CY7C1021B is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • Temperature Ranges — Commercial: 0°C to 70°C — Ind

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (64K x 16) Static RAM

Functional Description[1] The CY7C1021BN/CY7C10211BN is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • Temperature Ranges — Commercial: 0°C to 7

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (64K x 16) Static RAM

Functional Description [1] The CY7C1021D is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • Pin-and function-compatible with CY7C1021B • High speed

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (64K x 16) Static RAM

文件:322.08 Kbytes Page:10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1021BV产品属性

  • 类型

    描述

  • 型号

    CY7C1021BV

  • 制造商

    Cypress Semiconductor

  • 功能描述

    SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 10ns 48-Pin FBGA T/R

更新时间:2026-3-16 18:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CY
44;0205+
0205+
41
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CYPRESS
24+
SOJ44
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
CY
23+
SOJ-44
8560
受权代理!全新原装现货特价热卖!
CYPRESS SEMICONDUCTOR
25+
329
公司优势库存 热卖中!
Cypress(赛普拉斯)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
CRYESS
2015+
SOJ
19889
一级代理原装现货,特价热卖!
CYPRESS/赛普拉斯
2450+
SOP
9850
只做原厂原装正品现货或订货假一赔十!
CYPRESS
23+
TSOP-44
36698
公司原装现货!主营品牌!可含税欢迎查询
CYPRESS
25+23+
TSOP
23776
绝对原装正品全新进口深圳现货
Cypress
SOJ/44
1800
Cypress一级分销,原装原盒原包装!

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    可立即发货

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