型号 功能描述 生产厂家&企业 LOGO 操作

64Kx16StaticRAM

Features •Highspeed —tAA=12ns •CMOSforoptimumspeed/power •Lowactivepower —1320mW(max.) •Automaticpower-downwhendeselected •IndependentControlofUpperandLowerbits •Availablein44-pinTSOPIIand400-milSOJ

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

1-Mbit(64Kx16)StaticRAM

FunctionalDescription[1] TheCY7C1021Bisahigh-performanceCMOSstaticRAMorganizedas65,536wordsby16bits.Thisdevicehasanautomaticpower-downfeaturethatsignificantlyreducespowerconsumptionwhendeselected. Features •TemperatureRanges —Commercial:0°Cto70°C —Ind

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

64Kx16StaticRAM

Features •3.3Voperation(3.0V–3.6V) •Highspeed —tAA=10/12/15ns •CMOSforoptimumspeed/power •LowActivePower(Lversion) —576mW(max.) •LowCMOSStandbyPower(Lversion) —1.80mW(max.) •Automaticpower-downwhendeselected •Independentcontrolofupperandlo

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx16)StaticRAM

FunctionalDescription[1] TheCY7C1021BN/CY7C10211BNisahigh-performanceCMOSstaticRAMorganizedas65,536wordsby16bits.Thisdevicehasanautomaticpower-downfeaturethatsignificantlyreducespowerconsumptionwhendeselected. Features •TemperatureRanges —Commercial:0°Cto7

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

1-Mbit(64Kx16)StaticRAM

文件:322.08 Kbytes Page:10 Pages

CypressCypressSemiconductor

赛普拉斯赛普拉斯半导体公司

Cypress

CY7C1021BV产品属性

  • 类型

    描述

  • 型号

    CY7C1021BV

  • 制造商

    Cypress Semiconductor

更新时间:2025-6-24 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Cypress(赛普拉斯)
24+
NA/
8735
原厂直销,现货供应,账期支持!
CYPRESS
2016+
TSOP
8880
只做原装,假一罚十,公司可开17%增值税发票!
CYPRESS/赛普拉斯
24+
TSOP
27957
只做原装 公司现货库存
INFINEON
23+
K-W
4000
只有原装,请来电咨询
CYPRESS
24+
6000
只做自己库存,全新原装进口正品假一赔百,可开13%增
CYPRESS/赛普拉斯
22+
TSOP441000
100000
代理渠道/只做原装/可含税
CYPRESS/赛普拉斯
25+
SOJ44
54648
百分百原装现货 实单必成 欢迎询价
CY
00+
TSSOP
2744
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CYPRESS/赛普拉斯
24+
SSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
CY
23+
SOP
12800
公司只有原装 欢迎来电咨询。

CY7C1021BV芯片相关品牌

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  • SUNMATE
  • Temic
  • TRACOPOWER

CY7C1021BV数据表相关新闻