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型号	功能描述	生产厂家企业	LOGO
CY7C1021	64K x 16 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1320 mW (max.) • Automatic power-down when deselected • Independent Control of Upper and Lower bits • Available in 44-pin TSOP II and 400-mil SOJ	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-10BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-10VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-10ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12BAI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12VI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15BAI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15VI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-8BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-8VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-8ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-10VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-10ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-12VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-12ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15BAI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15ZI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-8VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-8ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15ZC	封装/外壳：44-TSOP（0.400"，10.16mm 宽）包装：管件描述：IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15ZXC	封装/外壳：44-TSOP（0.400"，10.16mm 宽）包装：托盘描述：IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路（IC）存储器	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021B	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021B	1-Mbit (64K x 16) Static RAM Functional Description[1] The CY7C1021B is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • Temperature Ranges — Commercial: 0°C to 70°C — Ind	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BN	1-Mbit (64K x 16) Static RAM Functional Description[1] The CY7C1021BN/CY7C10211BN is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • Temperature Ranges — Commercial: 0°C to 7	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021B	1-Mbit (64K x 16) Static RAM 文件：322.08 Kbytes Page：10 Pages	CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	Cypress

CY7C1021BV产品属性

类型
描述
型号
CY7C1021BV
制造商
Cypress Semiconductor

CY7C1021BV供应商更多...

更新时间：2025-10-20 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	CY7C1021BNL-15VXC	Cypress(赛普拉斯)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
上海意淼电子科技有限公司	CY7C1021DV33-10ZSXIT(SP005647837)	INFINEON	23+	K-W	4000	只有原装,请来电咨询	询价
中天科工半导体（深圳）有限公司	CY7C1021DV33-10ZSXIT	CYPRESS/赛普拉斯	25+	TSOP44	32360	CYPRESS/赛普拉斯全新特价CY7C1021DV33-10ZSXIT即刻询购立享优惠#长期有货	询价
深圳市金芯世纪电子有限公司	CY7C1021DV33-10ZSXIT	CYPRESS/赛普拉斯	22+	TSOP441000	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	CY7C1021DV33-10VXI	CYPRESS/赛普拉斯	25+	SOJ44	54648	百分百原装现货实单必成欢迎询价	询价
深圳市明嘉莱科技有限公司	CY7C1021BNL-15ZXIT	CYPRESS/赛普拉斯	24+	TSOP44	880000	明嘉莱只做原装正品现货	询价
深圳市粤骏腾电子科技有限公司	CY7C1021DV33-10ZSXIT	CYPRESS/赛普拉斯	24+		19240	大批量供应优势库存热卖	询价
深圳市华睿芯科技有限公司	CY7C1021CV33-10ZXI	CYPRESS/赛普拉斯	24+	SSOP	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市联世界科技有限公司	CY7C1021812ZC	CYPRESS	24+/25+		105	原装正品现货库存价优	询价
深圳市威雅利发展有限公司	CY7C1021V33-15ZIT	CY	00+	TSSOP	2744	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

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CY7C1021BV数据表相关新闻

CY7C0853V-100BBI
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CY7C1021DV33-10ZSXIT
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-15
CY7C1021DV33-10ZSXIT
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-15
CY7C1021BV33-128AI全新原装现货
可立即发货
2019-9-20

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CY7C1021BV产品属性

CY7C1021BV供应商更多...

CY7C1021BV芯片相关品牌

CY7C1021BV规格书下载地址

CY7C1021BV参数引脚图相关

CY7C1021BV数据表相关新闻

CY7C0853V-100BBI

CY7C1011CV33-12AXI

CY7C1019CV33-15ZC进口原装，主营军工级IC

CY7C1021DV33-10ZSXIT

CY7C1021DV33-10ZSXIT

CY7C1021BV33-128AI全新原装现货

DdatasheetPDF页码索引