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型号	功能描述	生产厂家&企业	LOGO
CY7C1021BV33	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-10BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-10VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-10ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12BAI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12VI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-12ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15BAI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15VI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-15ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-8BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-8VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33-8ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-10VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-10ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-12VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-12ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15BAC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15BAI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15ZI	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-8VC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-8ZC	64K x 16 Static RAM Features • 3.3V operation (3.0V–3.6V) • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected • Independent control of upper and lo	CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司	Cypress
CY7C1021BV33L-15ZC	封装/外壳：44-TSOP（0.400"，10.16mm 宽）包装：管件描述：IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路（IC）存储器	ETC 知名厂家	ETC
CY7C1021BV33L-15ZXC	封装/外壳：44-TSOP（0.400"，10.16mm 宽）包装：托盘描述：IC SRAM 1MBIT PARALLEL 44TSOP II 集成电路（IC）存储器	ETC 知名厂家	ETC

CY7C1021BV33产品属性

类型
描述
型号
CY7C1021BV33
制造商
Cypress Semiconductor

CY7C1021BV33供应商更多...

更新时间：2025-8-9 18:12:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	CY7C1021BV33-1	CYPRESS	24+	TSOP-44	2679	原装优势!绝对公司现货!可长期供货!	询价
深圳市凌旭科技有限公司	CY7C1021BV33-12ZI	CYPRESS	2016+	TSOP44	3275	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市威雅利发展有限公司	CY7C1021BV33-15ZC	CY	44;0205+	0205+	41	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳兆威电子有限公司	CY7C1021BV33-15ZC	CYPRESS	23+	TSSOP	46	原装正品现货	询价
深圳市创新迹电子有限公司	CY7C1021BV33L-15ZXC	Cypress Semiconductor Corp	23+	44-TSOP II	7300	专注配单,只做原装进口现货	询价
深圳市振宏微科技有限公司	CY7C1021BV33-12VC	CYPRESS	23+	NA	544	专做原装正品,假一罚百!	询价
深圳市正纳电子有限公司	CY7C1021BV33-12ZC	Cypress(赛普拉斯)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市华斯顿科技有限公司	CY7C1021BV33-15ZC	CYPRESS	25+23+	TSOP	23776	绝对原装正品全新进口深圳现货	询价
深圳市昌和盛利电子有限公司	CY7C1021BV33-12VC	CY	23+	N/A	9526		询价
深圳市胜彬电子有限公司	CY7C1021BV33L-15ZI	CYPRESS	22+	TSOP44	8000	原装正品支持实单	询价

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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-15
CY7C1021DV33-10ZSXIT
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-15
CY7C1021BV33-128AI全新原装现货
可立即发货
2019-9-20

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CY7C1021BV33产品属性

CY7C1021BV33供应商更多...

CY7C1021BV33芯片相关品牌

CY7C1021BV33规格书下载地址

CY7C1021BV33参数引脚图相关

CY7C1021BV33数据表相关新闻

CY7C0853V-100BBI

CY7C1011CV33-12AXI

CY7C1019CV33-15ZC进口原装，主营军工级IC

CY7C1021DV33-10ZSXIT

CY7C1021DV33-10ZSXIT

CY7C1021BV33-128AI全新原装现货

DdatasheetPDF页码索引