CY7C1011价格

参考价格:¥35.7077

型号:CY7C1011CV33-10ZSXA 品牌:Cynergy 3 备注:这里有CY7C1011多少钱,2025年最近7天走势,今日出价,今日竞价,CY7C1011批发/采购报价,CY7C1011行情走势销售排行榜,CY7C1011报价。
型号 功能描述 生产厂家 企业 LOGO 操作

128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011BV33 is a high-performance CMOS static RAM organized as 131,072 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Features • 3.0 – 3.6V Operation • High speed — tAA = 12, 15 ns

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:461.33 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM

文件:510.64 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 2MBIT PARALLEL 48FBGA 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Infineon

英飞凌

2-Mbit (128K x 16) Static RAM

文件:461.33 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:461.33 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:461.33 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1011产品属性

  • 类型

    描述

  • 型号

    CY7C1011

  • 制造商

    Cypress Semiconductor

更新时间:2025-12-26 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
24+
NA/
635
优势代理渠道,原装正品,可全系列订货开增值税票
CYPRESS/赛普拉斯
25+
TSOP
635
原装正品,假一罚十!
Cypress
TSOP44
2500
Cypress一级分销,原装原盒原包装!
CRYESS
2015+
TSOP
19889
一级代理原装现货,特价热卖!
CYPRESS/赛普拉斯
24+
TSSOP-56
6512
公司现货库存,支持实单
CYPRESS/赛普拉斯
TSOP
125000
一级代理原装正品,价格优势,长期供应!
CYPRESS
05+
原厂原装
4477
只做全新原装真实现货供应
CYPRESS/赛普拉斯
23+
TSOP-44
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
CYPRESS/赛普拉斯
2450+
TSOP44
6540
只做原厂原装正品现货或订货!终端工厂可以申请样品!
CYPRESS
2023+
TSOP44
50000
原装现货

CY7C1011数据表相关新闻