CY7C1011CV33价格

参考价格:¥35.7077

型号:CY7C1011CV33-10ZSXA 品牌:Cynergy 3 备注:这里有CY7C1011CV33多少钱,2026年最近7天走势,今日出价,今日竞价,CY7C1011CV33批发/采购报价,CY7C1011CV33行情走势销售排行榜,CY7C1011CV33报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY7C1011CV33

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1011CV33

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1011CV33

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1011CV33

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description The CY7C1011CV33 is a high-performance CMOS Static RAM organized as 131,072 words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7)

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:461.33 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM

文件:510.64 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:48-TFBGA 包装:托盘 描述:IC SRAM 2MBIT PARALLEL 48FBGA 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Infineon

英飞凌

2-Mbit (128K x 16) Static RAM

文件:461.33 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Infineon

英飞凌

2-Mbit (128K x 16) Static RAM

文件:461.33 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:461.33 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:368.11 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:352.61 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:533.8 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K 횞 16) Static RAM 360 mW (max) (Industrial and Automotive-A)

文件:525.88 Kbytes Page:17 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:461.33 Kbytes Page:13 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1011CV33产品属性

  • 类型

    描述

  • 型号

    CY7C1011CV33

  • 制造商

    Cypress Semiconductor

  • 功能描述

    2MB(128KX16) FAST ASYNCH SRAM 3.3V - Bulk

更新时间:2026-1-2 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
2025+
TSOP44
3500
原装进口价格优 请找坤融电子!
CYPRESS
23+
null
8000
只做原装现货
CYPRESS
23+
null
7000
CY
22+
BGA
20000
公司只做原装 品质保障
Cypress(赛普拉斯)
25+
5000
只做原装 假一罚百 可开票 可售样
CY
23+
BGA
12800
公司只有原装 欢迎来电咨询。
CYPRESS
22+
BGA
8000
原装正品支持实单
CY
04+
BGA
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CYPRESS
22+
null
7464
原装现货
CYPRESS
25+
TSOP
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可

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