CY62146价格

参考价格:¥42.3492

型号:CY62146ELL-45ZSXA 品牌:Cypress 备注:这里有CY62146多少钱,2025年最近7天走势,今日出价,今日竞价,CY62146批发/采购报价,CY62146行情走势销售排行榜,CY62146报价。
型号 功能描述 生产厂家 企业 LOGO 操作

256K x 16 Static RAM

Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Functional Description The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

文件:299.14 Kbytes Page:12 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

256K x 16 Static RAM

Infineon

英飞凌

4-Mbit (256K x 16) Static RAM

Infineon

英飞凌

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:412.29 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM Automatic power down when deselected

文件:256.39 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:529.99 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:463.7 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:309.78 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

Infineon

英飞凌

4-Mbit (256K x 16) Static RAM

文件:309.78 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:336.77 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:463.7 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM Automatic power down when deselected

文件:256.39 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256 K x 16) Static RAM

文件:309.59 Kbytes Page:16 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:463.7 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:463.7 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM

文件:336.77 Kbytes Page:11 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (256K x 16) Static RAM Automatic power down when deselected

文件:256.39 Kbytes Page:14 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY62146产品属性

  • 类型

    描述

  • 型号

    CY62146

  • 功能描述

    x16 SRAM

更新时间:2025-12-24 23:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
24+
TSOP
27447
只做原装 公司现货库存
CYPRESS/赛普拉斯
24+
NA/
3693
原装现货,当天可交货,原型号开票
CYPRESS(赛普拉斯)
24+
TFBGA48
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
CYPRESS/赛普拉斯
25+
TSOP
996880
只做原装,欢迎来电资询
CYPRESS/赛普拉斯
0613+
TSOP
480
原装现货
CYPRESS/赛普拉斯
23+
TSOP
98900
原厂原装正品现货!!
CYPRESS
NEW
N/A
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
CYPRESS
22+
BGA
8000
原装正品支持实单
Cypress
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
CYPRESS
23+
BGA
25980
公司原装现货!主营品牌!可含税欢迎查询

CY62146数据表相关新闻