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位置：首页 > IC中文资料 > CY62146

CY62146价格

参考价格：￥42.3492

型号：CY62146ELL-45ZSXA 品牌：Cypress 备注：这里有CY62146多少钱，2026年最近7天走势，今日出价，今日竞价，CY62146批发/采购报价，CY62146行情走势销售排行榜，CY62146报价。

型号	功能描述	生产厂家企业	LOGO
CY62146CV30	256K x 16 Static RAM Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146CV30LL-55BAI	256K x 16 Static RAM Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146CV30LL-55BVI	256K x 16 Static RAM Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146CV30LL-70BAI	256K x 16 Static RAM Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146CV30LL-70BVI	256K x 16 Static RAM Functional Description The CY62146CV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL™) in portable applications such as cellular telep	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-55BVI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-55BVXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-55ZSXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-70BVI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-70BVXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-70ZSXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-45BVI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-45BVXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-45ZSXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-55BVI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-55BVXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-55ZSXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-70BVI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-70BVXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-70ZSXI	4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146EV30	4-Mbit (256K x 16) Static RAM Functional Description The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146EV30LL	4-Mbit (256K x 16) Static RAM Functional Description The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146EV30LL-45BVXI	4-Mbit (256K x 16) Static RAM Functional Description The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146EV30LL-45ZSXI	4-Mbit (256K x 16) Static RAM Functional Description The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146CV18	256K x 16 Static RAM 文件：299.14 Kbytes Page：12 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146CV30	256K x 16 Static RAM	INFINEON 英飞凌	INFINEON
CY62146DV30	4-Mbit (256K x 16) Static RAM	INFINEON 英飞凌	INFINEON
CY62146DV30_09	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-55BVI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-55BVXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-55ZSXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-70BVI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-70BVXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30L-70ZSXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-45BVI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-45BVXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-45ZSXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-55BVI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-55BVXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-55ZSXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-70BVI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-70BVXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146DV30LL-70ZSXI	4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146E	4-Mbit (256K x 16) Static RAM Automatic power down when deselected 文件：256.39 Kbytes Page：14 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146E	4-Mbit (256K x 16) Static RAM 文件：529.99 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146E	4-Mbit (256K x 16) Static RAM 文件：463.7 Kbytes Page：14 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146E	4-Mbit (256K x 16) Static RAM 文件：309.78 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146E	4-Mbit (256K x 16) Static RAM	INFINEON 英飞凌	INFINEON
CY62146E_08	4-Mbit (256K x 16) Static RAM 文件：309.78 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146E_09	4-Mbit (256K x 16) Static RAM 文件：336.77 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146E_11	4-Mbit (256K x 16) Static RAM 文件：463.7 Kbytes Page：14 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146E_1106	4-Mbit (256K x 16) Static RAM Automatic power down when deselected 文件：256.39 Kbytes Page：14 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146E_13	4-Mbit (256 K x 16) Static RAM 文件：309.59 Kbytes Page：16 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146ELL	4-Mbit (256K x 16) Static RAM 文件：463.7 Kbytes Page：14 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146ELL-45ZSXA	4-Mbit (256K x 16) Static RAM 文件：463.7 Kbytes Page：14 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146ELL-45ZSXA	4-Mbit (256K x 16) Static RAM Automatic power down when deselected 文件：256.39 Kbytes Page：14 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY62146ELL-45ZSXA	4-Mbit (256K x 16) Static RAM 文件：336.77 Kbytes Page：11 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS

CY62146产品属性

类型
描述
密度 (Kb)：
4096
频率 (MHz)：
无
最高工作温度 (°C)：
85
Max. Operating VCCQ (V)：
5.50
最高工作电压 (V)：
5.50
最低工作温度 (°C)：
-40
Min. Operating VCCQ (V)：
4.50
最低工作电压 (V)：
4.50
组织 (X x Y)：
256K x 16
Part Family：
Async Micropower (MoBL) SRAMs
速率 (ns)：
45
Tape & Reel：
否
温度分类：
工业

CY62146供应商更多...

更新时间：2026-7-23 9:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
标准国际(香港)有限公司	CY6116-55DMB	Cypress	25+		1	公司优势库存热卖中!!	询价
深圳市威雅利发展有限公司	CY6116-55DMB	CYPRESS	9518+;9513+;0434+	DIP24	55	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市美思瑞电子科技有限公司	CY6116-55DMB	CYPRESS/赛普拉斯	22+	CDIP	12245	现货,原厂原装假一罚十!	询价
深圳飞弛宏科技有限公司	CY61128R206V0-25ZAC	CYPRESS/赛普拉斯	1037+	TSSOP-16	3200	全新、原装	询价
深圳市斯普仑科技有限公司	CY61128R206V0-25ZAC	CYPRESS/赛普拉斯	25+	N/A	20000	只做原装,只有原装。	询价
深圳市能元时代电子有限公司	CY6116-55DMB	CYPRESS	23+	DIP24	12800	公司只有原装欢迎来电咨询。	询价
深圳市力拓辉电子有限公司	CY6116-55DMB	CYPRESS	22+		5000	只做原装鄙视假货15118075546	询价
深圳市诺美思科技有限公司	CY6116-55DMB	CYPRESS		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市华来深电子有限公司	CY6116-55DMB	CY	23+	CDIP	8650	受权代理!全新原装现货特价热卖!	询价
深圳市旺财半导体有限公司	CY6116-55DMB	CYPRESS	25+		66880	原装正品，欢迎询价	询价

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找IC，尽在114IC

CY62146价格

CY62146产品属性

CY62146供应商更多...

CY62146芯片相关品牌

CY62146规格书下载地址

CY62146参数引脚图相关

CY62146数据表相关新闻

CY62167ELL-45ZXI

CY62148EV30LL-45ZSXA

CY62187G30-55BAXI

CY37064P100-125AC

CY62128ELL-45ZAXI,CY62128ELL-45ZAXIT,C

CY3406-ADJ深圳唯有度科技有限公司

DdatasheetPDF页码索引