位置：首页 > IC中文资料第6798页 > CY62146DV30L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY62146DV30L | 4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM Functional Description[1] The CY62146DV30 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular te | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
4-Mbit (256K x 16) Static RAM 文件：412.29 Kbytes Page：11 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY62146DV30L产品属性
- 类型
描述
- 型号
CY62146DV30L
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
4-Mbit(256K x 16) Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS(赛普拉斯) |
24+ |
BGA-48 |
16508 |
原装正品现货支持实单 |
|||
CYPRESS/赛普拉斯 |
0613+ |
TSOP |
480 |
原装现货 |
|||
Cypress |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
CYPRESS |
20+ |
TSSOP44 |
2960 |
诚信交易大量库存现货 |
|||
CYPRESS |
22+ |
TSOP |
8000 |
原装正品支持实单 |
|||
23+ |
TSOP |
12800 |
公司只有原装 欢迎来电咨询。 |
||||
CYPRESS |
24+ |
PLCC-44P |
37500 |
原装正品现货,价格有优势! |
|||
CYPRESS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
CY |
24+ |
TSOP44 |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
2022+ |
TSOP |
2711 |
原厂代理 终端免费提供样品 |
CY62146DV30L芯片相关品牌
CY62146DV30L规格书下载地址
CY62146DV30L参数引脚图相关
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- CY62146DV30LL-70ZSXIT
- CY62146DV30LL-70ZSXI
- CY62146DV30LL-70ZSI
- CY62146DV30LL-70BVXI
- CY62146DV30LL-70BVI
- CY62146DV30LL-55ZSXIT
- CY62146DV30LL-55ZSXI
- CY62146DV30LL-55BVXI
- CY62146DV30LL-55BVI
- CY62146DV30LL-45ZSXI
- CY62146DV30LL-45BVXI
- CY62146DV30LL-45BVI
- CY62146DV30LL
- CY62146DV30L-70ZSXI
- CY62146DV30L-70BVXI
- CY62146DV30L-70BVI
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- CY62146DV30L-55BVXI
- CY62146DV30L55BVXI
- CY62146DV30L-55BVI
- CY62146DV30_09
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- CY62146BV18LL-70BAI
- CY62145E-2XWI WAF
- CY62145CV181-2XWI WAF
- CY62145CV18 WAF
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- CY6213CV30LL-70BVXI
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- CY62128
- CY6117A
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- CY-4W
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- CY480
- CY4640
- CY4618
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产品属性 属性值 搜索相似 制造商： 赛普拉斯半导体 产品分类： 赛普拉斯半导体 牌： 赛普拉斯半导体
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2019-11-5
DdatasheetPDF页码索引
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