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CY62136V价格
参考价格：￥17.3416
型号：CY62136VLL-702IT 品牌：Cypress 备注：这里有CY62136V多少钱，2026年最近7天走势，今日出价，今日竞价，CY62136V批发/采购报价，CY62136V行情走势销售排行榜，CY62136V报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY62136V | 2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY62136V | 2-Mbit (128K x 16) Static RAM Functional Description[1]\nThe CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.\nThis is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular teleph • High speed\n — 55 ns\n• Temperature Ranges\n — Industrial: –40°C to 85°C\n — Automotive: –40°C to 125°C\n• Wide voltage range\n — 2.7V – 3.6V\n• Ultra-low active, standby power\n• Easy memory expansion with CE and OE features\n• TTL-compatible inputs and outputs\n• Automatic power-down whe; | INFINEON 英飞凌 | | |
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器 | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器 | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2 Mbit (128K x 16) Static RAM 文件：424.34 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY62136V产品属性
- 类型
描述
- 型号
CY62136V
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
2-Mbit(128K x 16) Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CY |
2518+ |
CDIP |
1546 |
只做原装正品现货或订货假一赔十! |
|||
CYPRESS |
2025+ |
BGA |
3925 |
全新原装、公司现货热卖 |
|||
CYPRESS |
9518+;9513+;0434+ |
DIP24 |
55 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Cypress |
25+ |
1 |
公司优势库存 热卖中!! |
||||
25+ |
500 |
公司现货库存 |
|||||
CYPRESS |
25+ |
66880 |
原装正品，欢迎询价 |
||||
CYPRESS |
22+ |
5000 |
只做原装鄙视假货15118075546 |
||||
CYPRESS/赛普拉斯 |
QQ咨询 |
DIP24 |
878 |
全新原装 研究所指定供货商 |
|||
CY |
25+ |
TSOP |
25000 |
进口原装,深圳现货,可出样 |
|||
CYPRESS |
23+ |
DIP24 |
12800 |
公司只有原装 欢迎来电咨询。 |
CY62136V芯片相关品牌
CY62136V规格书下载地址
CY62136V参数引脚图相关
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产品属性 属性值 搜索相似 制造商： 赛普拉斯半导体 产品分类： 赛普拉斯半导体 牌： 赛普拉斯半导体
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2019-11-5
DdatasheetPDF页码索引
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