CY62136V价格

参考价格:¥17.3416

型号:CY62136VLL-702IT 品牌:Cypress 备注:这里有CY62136V多少钱,2026年最近7天走势,今日出价,今日竞价,CY62136V批发/采购报价,CY62136V行情走势销售排行榜,CY62136V报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CY62136V

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY62136V

2-Mbit (128K x 16) Static RAM

INFINEON

英飞凌

128K x 16 Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128K x 16 Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:580.62 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:580.62 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:580.62 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:托盘 描述:IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路(IC) 存储器

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:580.62 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:580.62 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:580.62 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:580.62 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:580.62 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

文件:580.62 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M (128K x 16) Static RAM

Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2 Mbit (128K x 16) Static RAM

文件:477.86 Kbytes Page:15 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2 Mbit (128K x 16) Static RAM

文件:424.34 Kbytes Page:12 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2-Mbit (128 K x 16) Static RAM Ultra low standby power

文件:485.5 Kbytes Page:15 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY62136V产品属性

  • 类型

    描述

  • 型号

    CY62136V

  • 制造商

    CYPRESS

  • 制造商全称

    Cypress Semiconductor

  • 功能描述

    2-Mbit(128K x 16) Static RAM

更新时间:2026-3-2 23:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CYPRESS
0043+
BGA
882
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CYPRESS/赛普拉斯
2026+
BGA0707
29
原装正品,假一罚十!
CYPRESS/赛普拉斯
24+
SOP
6618
公司现货库存,支持实单
CY
21+
BGA
1625
只做原装正品,不止网上数量,欢迎电话微信查询!
CYPRESS
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
CYPRESS
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
CYPRESS
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
25+
500
公司现货库存
CYPRESS
23+
BGA0707
22172
公司原装现货!主营品牌!可含税欢迎查询
CYPRESS
25+23+
BGA
20808
绝对原装正品全新进口深圳现货

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