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CY62136V价格
参考价格：￥17.3416
型号：CY62136VLL-702IT 品牌：Cypress 备注：这里有CY62136V多少钱，2025年最近7天走势，今日出价，今日竞价，CY62136V批发/采购报价，CY62136V行情走势销售排行榜，CY62136V报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY62136V | 2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY62136V | 2-Mbit (128K x 16) Static RAM | Infineon 英飞凌 | | |
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：580.62 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128 K x 16) Static RAM Ultra low standby power 文件：485.5 Kbytes Page：15 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2 Mbit (128K x 16) Static RAM 文件：424.34 Kbytes Page：12 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2 Mbit (128K x 16) Static RAM 文件：477.86 Kbytes Page：15 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY62136V产品属性
- 类型
描述
- 型号
CY62136V
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
2-Mbit(128K x 16) Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS |
23+ |
TSOP |
5000 |
原装正品,假一罚十 |
|||
Cypress |
22+ |
44TSOP II |
9000 |
原厂渠道,现货配单 |
|||
CYP |
25+ |
TSOP44 |
502 |
全新原装正品支持含税 |
|||
CYPRESS |
2138+ |
原厂标准封装 |
8960 |
代理CYPRESS全系列芯片,原装现货 |
|||
CYP |
25+ |
BGA48 |
3629 |
原装优势!房间现货!欢迎来电! |
|||
CYPRESS |
16+ |
BGA |
1527 |
进口原装现货/价格优势! |
|||
CYPRESS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
CYPRESS |
NEW |
N/A |
9526 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
CYPRESS |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
CYPRESS/赛普拉斯 |
24+ |
TSSOP |
9600 |
原装现货,优势供应,支持实单! |
CY62136V芯片相关品牌
CY62136V规格书下载地址
CY62136V参数引脚图相关
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产品属性 属性值 搜索相似 制造商： 赛普拉斯半导体 产品分类： 赛普拉斯半导体 牌： 赛普拉斯半导体
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2019-11-5
DdatasheetPDF页码索引
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