位置：首页 > IC中文资料第6199页 > CY62136CV
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY62136CV | 2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY62136CV | 2-Mbit (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
CY62136CV | 2-Mbit (128K x 16) Static RAM | INFINEON 英飞凌 | | |
128K x 16 Static RAM Functional Description The CY62136CV18 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life® (MoBL™) in portable applications such as cellular telep | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description The CY62136CV18 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life® (MoBL™) in portable applications such as cellular telep | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description The CY62136CV18 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life® (MoBL™) in portable applications such as cellular telep | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description The CY62136CV18 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life® (MoBL™) in portable applications such as cellular telep | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description The CY62136CV18 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life® (MoBL™) in portable applications such as cellular telep | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2M (128K x 16) Static RAM Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM | INFINEON 英飞凌 | | ||
2-Mbit (128K x 16) Static RAM | INFINEON 英飞凌 | | ||
2-Mbit (128K x 16) Static RAM 文件：305.68 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：305.68 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：305.68 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM 文件：305.68 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
128K x 16 Static RAM Functional Description[1] The CY62136V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2-Mbit (128K x 16) Static RAM Functional Description[1] The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellula | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
2 Mbit (128K x 16) Static RAM 文件：424.34 Kbytes Page：12 Pages | CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY62136CV产品属性
- 类型
描述
- 型号
CY62136CV
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
2M(128K x 16) Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYP |
03+ |
BGA |
3991 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CYPRESS |
23+ |
BGA |
8650 |
受权代理!全新原装现货特价热卖! |
|||
CYPRESS |
22+ |
BGA |
8000 |
原装正品支持实单 |
|||
Cypress Semiconductor Corp |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
CY |
07+ |
10 |
全新 发货1-2天 |
||||
CYPRESS/赛普拉斯 |
24+ |
BGA |
47186 |
郑重承诺只做原装进口现货 |
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CYP |
22+ |
BGA |
20000 |
公司只做原装 品质保障 |
|||
CYPRESS/赛普拉斯 |
23+ |
BGA |
5000 |
专注配单,只做原装进口现货 |
|||
CYPRESS |
2138+ |
原厂标准封装 |
8960 |
代理CYPRESS全系列芯片,原装现货 |
|||
CYPRESS |
24+/25+ |
34000 |
原装正品现货库存价优 |
CY62136CV规格书下载地址
CY62136CV参数引脚图相关
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产品属性 属性值 搜索相似 制造商： 赛普拉斯半导体 产品分类： 赛普拉斯半导体 牌： 赛普拉斯半导体
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CY3406-ADJ公司全新原装正品现货热卖，假一罚十！价格优惠！欢迎新老客户来电咨询采购！
2019-11-5
DdatasheetPDF页码索引
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