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CY14B101L价格
参考价格：￥104.3406
型号：CY14B101LA-BA45XI 品牌：Cynergy 3 备注：这里有CY14B101L多少钱，2025年最近7天走势，今日出价，今日竞价，CY14B101L批发/采购报价，CY14B101L行情走势销售排行榜，CY14B101L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY14B101L | 1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY14B101L | 1-Mbit (128K x 8) nvSRAM | Infineon 英飞凌 | | |
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128K x 8) nvSRAM Functional Description The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while i | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8) nvSRAM 文件：550.26 Kbytes Page：18 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：1.01329 Mbytes Page：26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：48-TFBGA 包装：托盘 描述：IC NVSRAM 1MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvSRAM (non-volatile SRAM) | Infineon 英飞凌 | | ||
封装/外壳：48-TFBGA 包装：托盘 描述：IC NVSRAM 1MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY14B101L产品属性
- 类型
描述
- 型号
CY14B101L
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
1-Mbit(128K x 8) nvSRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS/赛普拉斯 |
25+ |
原装 |
32000 |
CYPRESS/赛普拉斯全新特价CY14B101LA-BA45XI即刻询购立享优惠#长期有货 |
|||
CYPRESS |
23+ |
SOP23 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon |
24+ |
48-BSSOP |
30000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
CYPRESS |
20+ |
SOP |
8000 |
公司100%原装 |
|||
CYPRESS/赛普拉斯 |
23+/24+ |
SOIC-32 |
9865 |
原装正品现货库存,价格美丽可开13点税 |
|||
CYPRESS |
23+ |
TSOP |
335 |
正规渠道,只有原装! |
|||
CYPRESS/赛普拉斯 |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
CYPRESS |
25+ |
TSOP |
6000 |
全新原装现货、诚信经营! |
|||
CYPRESS(赛普拉斯) |
24+ |
N/A |
6800 |
原装正品现货支持实单 |
|||
Infineon |
26+ |
48-BSSOP |
60000 |
只有原装,可BOM表配单 |
CY14B101L规格书下载地址
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- CY12B
- CY12AS
- CY12A
- CY123
- CY-122VB-Z
- CY-122VB-P-Z
- CY-122VB-P
- CY-122VB
- CY-122VA-Z
- CY-122VA-P-Z
- CY-122VA-P
- CY-122B
- CY-122A
- CY-121B
- CY-121A
- CY11BS
CY14B101L数据表相关新闻
CY15B102Q-SXM百分百原装，等你来
CY15B102Q-SXM百分百原装，等你来
2024-8-27CXB3590-0000-000N0YAD32Q
產品: White CoB LEDs 安裝風格: SMD/SMT 封裝/外殼: COB - Chip-on-Board 照明色彩: Warm White 波長/色溫: 3200 K 發光強度: - 光通量/輻射通量: 9000 lm 顯色指數 - CRI: 93 視角: 115 deg If - 順向電流: 2.4 A Vf - 順向電壓: 36 V 額定功率: - 長度: 34.85 mm 寬度: 34.85 mm 高度: 1.7
2020-12-21CY15B108QN-40LPXI
CY15B108QN-40LPXI
2020-11-30CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
2020-4-1CXD2163BR
CXD2163BR，全新原装当天发货或门市自取0755-82732291.
2019-12-31CY14B108N-BA25XI进口原装，主营军工级IC
CY14B108N-BA25XI XILINX(赛灵思) ，ALTERA（阿尔特拉），军工级IC专业优势渠道
2019-10-18
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