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CY14B101LA价格
参考价格：￥104.3406
型号：CY14B101LA-BA45XI 品牌：Cynergy 3 备注：这里有CY14B101LA多少钱，2025年最近7天走势，今日出价，今日竞价，CY14B101LA批发/采购报价，CY14B101LA行情走势销售排行榜，CY14B101LA报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CY14B101LA | 1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 |   | |
CY14B101LA | 1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | |
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 128K bytes of 8 bits each or 64K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the wor | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：1.01329 Mbytes Page：26 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：48-TFBGA 包装：托盘 描述：IC NVSRAM 1MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
封装/外壳：48-TFBGA 包装：托盘 描述：IC NVSRAM 1MBIT PARALLEL 48FBGA 集成电路（IC） 存储器 | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvSRAM (non-volatile SRAM) | Infineon 英飞凌 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
nvsRAM（非易失性 SRAM） | Infineon 英飞凌 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM | Infineon 英飞凌 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1 Mbit (128K x 8/64K x 16) nvSRAM 文件：1.05739 Mbytes Page：28 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | | ||
1-Mbit (128 K 횞 8/64 K 횞 16) nvSRAM 文件：725.17 Kbytes Page：29 Pages | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |
CY14B101LA产品属性
- 类型
描述
- 型号
CY14B101LA
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
1 Mbit(128K x 8/64K x 16) nvSRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYPRESS(赛普拉斯) |
24+ |
TSOPII-44 |
5768 |
百分百原装正品,可原型号开票 |
|||
VISHAY/威世 |
24+ |
SMD |
6000 |
公司现货库存,支持实单 |
|||
Cypress |
24+ |
TSOP |
6800 |
只做自己库存,全新原装进口正品假一赔百,可开13个点增票 |
|||
CYPRESS/赛普拉斯 |
25+ |
原装 |
32000 |
CYPRESS/赛普拉斯全新特价CY14B101LA-BA45XI即刻询购立享优惠#长期有货 |
|||
CYPRESS/赛普拉斯 |
25+ |
NA |
75 |
原装正品,假一罚十! |
|||
CYPRESS |
20+ |
SOP |
8000 |
公司100%原装 |
|||
CYPRESS |
24+ |
SOP |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CYPRESS/赛普拉斯 |
24+ |
SSOP-48 |
9500 |
全新原装现货特价销售,欢迎来电查询 |
|||
Infineon |
24+ |
48-BSSOP |
30000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
CYPRESS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
CY14B101LA芯片相关品牌
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2020-12-21CY15B108QN-40LPXI
CY15B108QN-40LPXI
2020-11-30CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
CY10C680J，CY10C6R2J，CY10C750J，CY10C820J，CY10C910J
2020-4-1CXD2163BR
CXD2163BR，全新原装当天发货或门市自取0755-82732291.
2019-12-31CY14B108N-BA25XI进口原装，主营军工级IC
CY14B108N-BA25XI XILINX(赛灵思) ，ALTERA（阿尔特拉），军工级IC专业优势渠道
2019-10-18
DdatasheetPDF页码索引
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