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CXT5551晶体管资料

  • CXT5551别名：CXT5551三极管、CXT5551晶体管、CXT5551晶体三极管

  • CXT5551生产厂家：美国中央固体工业公司

  • CXT5551制作材料：Si-NPN

  • CXT5551性质：射频/高频放大 （HF）_功率放大 （L）

  • CXT5551封装形式：贴片封装

  • CXT5551极限工作电压：150V

  • CXT5551最大电流允许值：

  • CXT5551最大工作频率：100MHZ

  • CXT5551引脚数：3

  • CXT5551最大耗散功率：1.2W

  • CXT5551放大倍数：

  • CXT5551图片代号：H-100

  • CXT5551vtest：150

  • CXT5551htest：100000000

  • CXT5551atest：0

  • CXT5551wtest：1.2

  • CXT5551代换 CXT5551用什么型号代替：CZT5551,

CXT5551价格

参考价格：￥1.4470

型号：CXT5551TR 品牌：CENTRAL SEMICONDUCTOR 备注：这里有CXT5551多少钱，2026年最近7天走势，今日出价，今日竞价，CXT5551批发/采购报价，CXT5551行情走势销售排行榜，CXT5551报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CXT5551

SURFACE MOUNT NPN SILICON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

CENTRAL

CXT5551

NPN Plastic-Encapsulate Transistors

Features ● Halogen free available upon request by adding suffix -HF ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Power Dissipation: PCM=0.5W (Tamb=25°C) ● Collector Current: ICM=0.6A ● Collector-Base Voltage: V(BR)CBO=180V ● Marking

MCC

CXT5551

TRANSISTOR (NPN)

FEATURES ● Switching and amplification in high voltage Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.180v)

HTSEMI

金誉半导体

CXT5551

丝印代码：1G6；SOT-89-3L Plastic-Encapsulate Transistors

Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V)

DGNJDZ

南晶电子

CXT5551

NPN Switching Transistor

Features | e Switching and amplification in high voltage | Applications such as telephony | e Low current(max. 600mA) | e High voltage(max.180V) |

TECHPUBLIC

台舟电子

CXT5551

Plastic-Encapsulate Transistors

FEATURES • Switching and amplification in high voltage Applications such as telephony • Low current(max. 600mA) • High voltage(max.180v)

HOTTECH

合科泰

CXT5551

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Switching and amplification in high voltage. ● Low current(max. 600mA) ● High voltage (max. 180V) APPLICATIONS ● High voltage amplifier application.

BILIN

银河微电

CXT5551

160V,0.6A,General Purpose NPN Bipolar Transistor

GALAXY

银河微电

CXT5551

三极管

Haochang

CXT5551

中等功率双极型晶体管

MCC

CXT5551

NPN Plastic-Encapsulate Transistors

文件：369.87 Kbytes Page：2 Pages

MCC

CXT5551E

ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. FEATURES: • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA Max • Low Saturation Vol

CENTRAL

CXT5551HC

SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.

CENTRAL

CXT5551_10

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：290.8 Kbytes Page：2 Pages

CENTRAL

CXT5551_14

NPN Plastic-Encapsulate Transistors

文件：369.87 Kbytes Page：2 Pages

MCC

CXT5551_15

NPN Transistors

文件：1.03138 Mbytes Page：2 Pages

KEXIN

科信电子

CXT5551_15

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：290.8 Kbytes Page：2 Pages

CENTRAL

CXT5551E BK

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 220V 0.6A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

CENTRAL

CXT5551E TR

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 220V 0.6A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

CENTRAL

CXT5551E_15

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：296.82 Kbytes Page：2 Pages

CENTRAL

CXT5551HC_10

SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

文件：289.5 Kbytes Page：2 Pages

CENTRAL

CXT5551HC_15

SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

文件：289.5 Kbytes Page：2 Pages

CENTRAL

NDL5551

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

NDL5551P

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

NDL5551P

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

NDL5551P

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

NEC

瑞萨

NDL5551PC

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

CXT5551产品属性

  • 类型

    描述

  • Polarity：

    NPN

  • PCM(W)：

    0.5

  • IC(A)：

    0.6

  • VCBO(V)：

    180

  • VCEO(V)：

    160

  • VEBO(V)：

    6

  • hFEMin：

    80

  • hFEMax：

    300

  • hFE@VCE(V)：

    5

  • hFE@IC(A)：

    0.01

  • VCE(sat)(V)：

    0.2

  • VCE(sat)@IC(A)：

    0.05

  • VCE(sat)@IB(A)：

    0.005

  • Package：

    SOT-89-3L

CXT5551供应商更多...

更新时间：2026-5-17 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华斯顿科技有限公司
CXT5551
长电
25+23+
SOT-89
24351
绝对原装正品全新进口深圳现货
询价
深圳市一线半导体有限公司
CXT5551
CENTRAL
24+
SOT-89
98200
新进库存/原装
询价
深圳市向鸿伟业电子有限公司
CXT5551TRPBFREE
CENTRAL
2407+
con
10750
只有原装!量大可以订!一片起卖!
询价
深圳市中联芯电子有限公司
CXT5551120-180
Cj江苏长电
25+
SOT89
11000
原装正品 有挂有货 假一赔十
询价
深圳市勤思达科技有限公司
CXT5551
CJ/长电/长晶
24+
SOT-89
5000
全新原装正品,现货销售
询价
洪芯国际半导体（深圳）有限公司
CXT5551
长电
26+
SOT-89
86720
全新原装正品价格最实惠 承诺假一赔百
询价
深圳市宇创芯科技有限公司
CXT5551TR
CENTRAL
24+
SOT89
9600
原装现货,优势供应,支持实单!
询价
深圳诚思涵科技有限公司
CXT55511G6
CJ
19+
SOT-89
20000
询价
北京京北通宇电子元件有限公司
CXT5551TRPBFREE
CENTRAL SEMICONDUCTOR CORP
24+
con
25
现货常备产品原装可到京北通宇商城查价格
询价
深圳市中远芯科技有限公司
CXT5551
LMSEMI/砺马
23+
SOT89
30000
原装现货
询价

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