SURFACE MOUNT NPN SILICON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Switching and amplification in high voltage. ● Low current(max. 600mA) ● High voltage (max. 180V) APPLICATIONS ● High voltage amplifier application.

TRANSISTOR (NPN)

FEATURES ● Switching and amplification in high voltage Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.180v)

NPN Plastic-Encapsulate Transistors

Features ● Halogen free available upon request by adding suffix -HF ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Power Dissipation: PCM=0.5W (Tamb=25°C) ● Collector Current: ICM=0.6A ● Collector-Base Voltage: V(BR)CBO=180V ● Marking

SOT-89-3L Plastic-Encapsulate Transistors

Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V)

Plastic-Encapsulate Transistors

FEATURES • Switching and amplification in high voltage Applications such as telephony • Low current(max. 600mA) • High voltage(max.180v)

NPN Switching Transistor

Features | e Switching and amplification in high voltage | Applications such as telephony | e Low current(max. 600mA) | e High voltage(max.180V) |

160V,0.6A,General Purpose NPN Bipolar Transistor

三极管

中等功率双极型晶体管

NPN Plastic-Encapsulate Transistors

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ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. FEATURES: • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA Max • Low Saturation Vol

SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.

SURFACE MOUNT NPN SILICON TRANSISTOR

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NPN Plastic-Encapsulate Transistors

文件：369.87 Kbytes Page：2 Pages

NPN Transistors

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SURFACE MOUNT NPN SILICON TRANSISTOR

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封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 220V 0.6A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 220V 0.6A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SURFACE MOUNT NPN SILICON TRANSISTOR

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SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

文件：289.5 Kbytes Page：2 Pages

SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

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Cold Shrink] Rubber Splicing Kits

1. Product Description 3M] 5550 Series Cold Shrink] Rubber Splicing Kits are designed for splicing 5/8 kV shielded and non-shielded, solid dielectric, power cables. Each kit contains all the materials (except connectors) required to construct 3 single-conductor splices on tape shield, wire sh

500 Series Intelligent Sensors with Integral Communications

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500 Series Intelligent Sensors with Integral Communications

文件：123.14 Kbytes Page：4 Pages

500 Series Intelligent Sensors with Integral Communications

文件：123.14 Kbytes Page：4 Pages

500 Series Intelligent Sensors with Integral Communications

文件：123.14 Kbytes Page：4 Pages