DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage.

FEATURES:

• High Collector Breakdown Voltage 250V

• Low Leakage Current 50nA Max

• Low Saturation Voltage 100mV Max @ 50mA

• Complementary Device CXT5401E

• SOT-89 Surface Mount Package

APPLICATIONS:

• General purpose switching and amplification

• Telephone applications