Fast Recovery and High Power Diode

Features The CTXS-4603S is a high power and fast recovery diode which realize a peak reverse voltage of 300 V, a typical forward voltage drop of 1.05 V (typ.) and typical trr-time of 32 ns (typ.) optimizing a life-time control. It supports high-speed switching and reduces forward-loss. The low t

Fast Recovery Diode

FEATURES · Low Forward Voltage, High Efficiency · High Recovery Speed APPLICATIONS · White Goods · PFC Circuit · Telecommunication Device

超高速整流二极管・大电流二极管

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications).

TO-3 POWER TRANSISTOR SOCKET

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7A竊?0V N-CHANNEL MOSFET

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