TO-3 POWER TRANSISTOR SOCKET

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包装：卷带（TR） 描述：CONN TRANSIST TO-3 3POS TIN 连接器，互连器件 IC 插座

Inductive Sensor – With Increased Switching Distance

Features ■Threaded barrel, M8 x 1 ■Nickel-plated brass ■Large sensing range ■DC 3-wire, 10…30 VDC ■NO contact, PNP output ■M8 x 1 male connector Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC f

Inductive Sensor – With Increased Switching Distance

Features ■Threaded barrel, M8 x 1 ■Nickel-plated brass ■Large sensing range ■DC 4-wire, 10…30 VDC ■Changeover contact, PNP output ■M8 x 1 male connector Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagne

Inductive Sensor

Features ■Threaded barrel, M8 x 1 ■Stainless steel, 1.4404 ■DC 3-wire, 10…30 VDC ■NO contact, PNP output ■M12 x 1 male connector Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that intera

Inductive Sensor

Features ■Threaded barrel, M8 x 1 ■Stainless steel, 1.4404 ■DC 3-wire, 10…30 VDC ■NO contact, NPN output ■M8 x 1 male connector Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that interac

Inductive Sensor

Features ■Threaded barrel, M8 x 1 ■Stainless steel, 1.4404 ■DC 3-wire, 10…30 VDC ■NO contact, PNP output ■M12 x 1 male connector Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that intera

Inductive Sensor

Features ■M8 × 1 threaded barrel ■Stainless steel, 1.4404 ■DC 3-wire, 10…30 VDC ■NO contact, NPN output ■M12 x 1 male connector Functional principle Inductive sensors detect metal objects contactless and wear-free. For this, they use a high-frequency electromagnetic AC field that interac

包装：盒 描述：CLNR FLR NTRL STTGRD 2.5GAL BOX 静电控制，防静电，ESD，无尘室产品 无尘室处理，清洁剂，擦拭巾

7A竊?0V N-CHANNEL MOSFET

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Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications).