TO-3POWERTRANSISTORSOCKET

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包装：卷带（TR） 描述：CONN TRANSIST TO-3 3POS TIN 连接器，互连器件 IC 插座

InductiveSensor–WithIncreasedSwitchingDistance

Features ■Threadedbarrel,M8x1 ■Nickel-platedbrass ■Largesensingrange ■DC3-wire,10…30VDC ■NOcontact,PNPoutput ■M8x1maleconnector Functionalprinciple Inductivesensorsdetectmetalobjects contactlessandwear-free.Forthis,theyusea high-frequencyelectromagneticACf

InductiveSensor–WithIncreasedSwitchingDistance

Features ■Threadedbarrel,M8x1 ■Nickel-platedbrass ■Largesensingrange ■DC4-wire,10…30VDC ■Changeovercontact,PNPoutput ■M8x1maleconnector Functionalprinciple Inductivesensorsdetectmetalobjects contactlessandwear-free.Forthis,theyusea high-frequencyelectromagne

InductiveSensor

Features ■Threadedbarrel,M8x1 ■Stainlesssteel,1.4404 ■DC3-wire,10…30VDC ■NOcontact,PNPoutput ■M12x1maleconnector Functionalprinciple Inductivesensorsdetectmetalobjects contactlessandwear-free.Forthis,theyusea high-frequencyelectromagneticACfieldthat intera

InductiveSensor

Features ■Threadedbarrel,M8x1 ■Stainlesssteel,1.4404 ■DC3-wire,10…30VDC ■NOcontact,NPNoutput ■M8x1maleconnector Functionalprinciple Inductivesensorsdetectmetalobjects contactlessandwear-free.Forthis,theyusea high-frequencyelectromagneticACfieldthat interac

InductiveSensor

Features ■Threadedbarrel,M8x1 ■Stainlesssteel,1.4404 ■DC3-wire,10…30VDC ■NOcontact,PNPoutput ■M12x1maleconnector Functionalprinciple Inductivesensorsdetectmetalobjects contactlessandwear-free.Forthis,theyusea high-frequencyelectromagneticACfieldthat intera

InductiveSensor

Features ■M8×1threadedbarrel ■Stainlesssteel,1.4404 ■DC3-wire,10…30VDC ■NOcontact,NPNoutput ■M12x1maleconnector Functionalprinciple Inductivesensorsdetectmetalobjects contactlessandwear-free.Forthis,theyusea high-frequencyelectromagneticACfieldthat interac

包装：盒 描述：CLNR FLR NTRL STTGRD 2.5GAL BOX 静电控制，防静电，ESD，无尘室产品 无尘室处理，清洁剂，擦拭巾

7A竊?0VN-CHANNELMOSFET

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ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4603usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardproductAO4603isPb-free(meetsROHS&Sony

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4603usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.StandardproductAO4603isPb-free(meetsROHS&Sony

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAON4603usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAON4603isPb-free(meetsROHS&Sony259specifications).