Low VF and High Power Diode

Description The CTNS-4603S is a 300 V, 60 A, fast recovery diode. The maximum VF of 1.2 V and the maximum trr of 100 ns (IF : IRP = 1 : 1) are realized by optimizing the trade-off relationship between VF and trr. The low thermal resistance package achieves high performance in terms of heat dissip

Fast Recovery Diode

FEATURES · Low Forward Voltage, High Efficiency · High Recovery Speed APPLICATIONS · DC-DC Converter · PFC Circuit · Large Current Secondary Side Rectifier

超高速整流二极管・大电流二极管

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4603 is Pb-free (meets ROHS & Sony

Complementary Enhancement Mode Field Effect Transistor

General Description The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications).

TO-3 POWER TRANSISTOR SOCKET

文件：299.36 Kbytes Page：1 Pages

7A竊?0V N-CHANNEL MOSFET

文件：200.87 Kbytes Page：4 Pages