位置：首页 > IC中文资料第3126页 > CT45
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CT45 | HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD FEATURES General Purpose Hermetically Sealed Glass Package Switching Diode | CDIL |   | |
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
1Mbit/s High Speed Phototransistor Optocoupler Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | CTMICRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | | ||
XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time: | ALLEGRO | |
CT45产品属性
- 类型
描述
- 型号
CT45
- 制造商
RAPESCO
- 功能描述
CABLE TACKER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CTMRO |
24+ |
NA/ |
3325 |
原装现货,当天可交货,原型号开票 |
|||
C-TECH |
25+ |
SMD |
18200 |
原装正品,假一罚十! |
|||
CTMICRO |
25+ |
SOP4 |
880000 |
明嘉莱只做原装正品现货 |
|||
CT |
25+23+ |
DIP |
11066 |
绝对原装正品全新进口深圳现货 |
|||
三星 |
22+ |
5000 |
只做原装鄙视假货15118075546 |
||||
CREE/科锐 |
24+ |
TO-220 |
6618 |
公司现货库存,支持实单 |
|||
CTMICRO |
24+ |
SOP |
47900 |
只做原装进口现货 |
|||
火炬 |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
|||
CTMICRO |
24+ |
SOP |
9000 |
只做原装，欢迎询价，量大价优 |
|||
CT MICRO |
2447 |
DIP-6 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
CT45芯片相关品牌
CT45规格书下载地址
CT45参数引脚图相关
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CT45数据表相关新闻
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