型号 功能描述 生产厂家 企业 LOGO 操作
CT450

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

CT450

电场传感器 0 至 >1000 A 传感器 IC

ALLEGRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

1Mbit/s High Speed Phototransistor Optocoupler

Description The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

CTMICRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

XtremeSense™ TMR Contactless Current Sensor with 1 MHz Bandwidth and Programmable Gain

FEATURES AND BENEFITS • User-programmable field range: □ 6 to 24 mT • Preset magnetic field ranges: □ 0 to 6 mT □ ±6 mT □ 0 to 12 mT □ ±12 mT □ 0 to 24 mT □ ±24 mT • Linear analog output voltage • 1 MHz bandwidth • Response time:

ALLEGRO

CT450产品属性

  • 类型

    描述

  • 型号

    CT450

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    SERVICE MANUAL

更新时间:2025-12-25 14:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CTMICRO
23+
DIP
8197
三星
22+
5000
只做原装鄙视假货15118075546
CT MICRO
2021+
DIP-8
882
CTMICRO
25+
DIP8
880000
明嘉莱只做原装正品现货
CTMICRO
24+
DIP
9000
只做原装,欢迎询价,量大价优
CTMICRO
22+
DIP
6000
十年配单,只做原装
CTMICRO
2021+
DIP
9000
原装现货,随时欢迎询价
CREE/科锐
24+
TO-220
6618
公司现货库存,支持实单
CTMICRO
24+
DIP
47900
只做原装进口现货
CTMICRO
24+
DIP
60000
全新原装现货

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