N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.115 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175oC OPERATING TEMPERATURE FOR STANDARD PACKAGE ■ APPLIC

POWER FIELD EFFECT TRANSISTOR

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EUROLINE - DC/DC - CONVERTER

文件：97.8 Kbytes Page：3 Pages