N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 550V,60A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-247package. RoHScompliant.

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=88mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=88mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

N-channel55V-8.0m??-65A-DPAK-IPAKMDmesh??lowvoltagePowerMOSFET

Description Thisn-channelenhancementmodePowerMOSFETisthelatestrefinementofSTMicroelectronicunique“SingleFeatureSize™“strip-basedprocesswithlesscriticalaligmentstepsandthereforearemarkablemanufacturingreproducibility.Theresultingtransistorshowsextremelyhighpackin