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CSD88539ND价格

参考价格:¥3.1320

型号:CSD88539ND 品牌:TI 备注:这里有CSD88539ND多少钱,2026年最近7天走势,今日出价,今日竞价,CSD88539ND批发/采购报价,CSD88539ND行情走势销售排行榜,CSD88539ND报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CSD88539ND

丝印代码:88539N;CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

CSD88539ND

丝印代码:88539N;CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

CSD88539ND

采用 SO-8 封装的双路、28mΩ、60V、N 沟道 NexFET™ 功率 MOSFET

这款双路小外形尺寸 (SO)-8,60V,23mΩ NexFET 功率 MOSFET 被设计运行为低电流电机控制应用中的半桥。 顶视图 RθJA = 60°C/W,这是在一个厚度 0.06 英寸环氧树脂 (FR4) 印刷电路板 (PCB) 上的 1 英寸2,2 盎司 的铜过渡垫片上测得的典型值脉冲持续时间 ≤ 300μs,占空比 ≤ 2% • 超低 Qg 和 Qgd\n• 雪崩额定值\n• 无铅\n• 符合 RoHS 环保标准\n• 无卤素;

TI

德州仪器

CSD88539ND

Dual 60 V N-Channel NexFET Power MOSFETs

文件:961.16 Kbytes Page:13 Pages

TI

德州仪器

丝印代码:88539N;CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

丝印代码:88539N;CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

丝印代码:88539N;CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

丝印代码:88539N;CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

丝印代码:88539N;CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

丝印代码:88539N;CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

丝印代码:88539N;CSD88539ND Dual 60 V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Half Bridge for Motor Control • Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurren

TI

德州仪器

CSD88539ND, Dual 60 V N-Channel NexFET Power MOSFETs

文件:985.96 Kbytes Page:14 Pages

TI

德州仪器

Dual 60 V N-Channel NexFET Power MOSFETs

文件:961.16 Kbytes Page:13 Pages

TI

德州仪器

Dual 60 V N-Channel NexFET Power MOSFETs

文件:961.16 Kbytes Page:13 Pages

TI

德州仪器

CSD88539ND产品属性

  • 类型

    描述

  • Configuration:

    Dual

  • Rds(on) max at VGS=10 V (mOhms):

    28

  • IDM - pulsed drain current (Max) (A):

    46

  • QG typ (nC):

    14

  • QGD typ (nC):

    2.3

  • Package (mm):

    SO-8

  • VGS (V):

    20

  • VGSTH typ (V):

    3

  • ID - silicon limited at Tc=25degC (A):

    11.7

  • ID - package limited (A):

    15

  • Logic level:

    No

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
26+
SOIC-8
10548
原厂订货渠道,支持账期,一站式服务!
TI
23+
SOP8
14500
全新原装假一赔十
TI/德州仪器
25+
SOIC-8150mil
36000
TI/德州仪器全新特价CSD88539NDT即刻询购立享优惠#长期有货
TI(德州仪器)
24+/25+
10000
原装正品现货库存价优
TI
23+
SOIC-8
1070
正规渠道,只有原装!
TI/德州仪器
202005+5
SOIC-8
5000
原装进口公司现货假一赔十
TI(德州仪器)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
TI/德州仪器
21+
SOP-8
3500
百域芯优势 实单必成 可开13点增值税发票
TI
25+23+
SOP8
48284
绝对原装正品现货,全新深圳原装进口现货
TI/德州仪器
2223+
SOP8
27500
A3-7货柜原装正品支持实单

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