isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 150A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

CSD19505KCS, 80 V N-Channel NexFET Power MOSFETs

文件：820.68 Kbytes Page：10 Pages

采用 TO-220 封装的单路、3.1mΩ、80V、N 沟道 NexFET™ 功率 MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

80 V N-Channel NexFET Power MOSFET

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Portable Cordage, 3 C #14 Str BC, PVC Ins, PVC Jkt, UL Type STOW-A

Product Description Portable Cordage, 3 Conductor 14AWG (41x30) Bare Copper, PVC Insulation, PVC Outer Jacket, UL Type STOW-A