SILICON PLANAR EPITAXIAL TRANSISTOR

SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package N-P-N transistor

SILICON PLANAR EPITAXIAL TRANSISTOR

SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package N-P-N transistor

SILICON PLANAR EPITAXIAL TRANSISTOR

SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package N-P-N transistor

SOT-23 - Power Transistor and Darlingtons

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(-) 10.000 Volt Ultrahigh Precision Reference Series

PRODUCT DESCRIPTION The AD2710 and AD2712 are temperature-compensated, hybrid voltage references which provoid precise 10.000V output from an unregulated input level from 13.5 to 16.5 volts.

(-) 10.000 Volt Ultrahigh Precision Reference Series

PRODUCT DESCRIPTION The AD2710 and AD2712 are temperature-compensated, hybrid voltage references which provoid precise 10.000V output from an unregulated input level from 13.5 to 16.5 volts.

Fast Switching Thyristor

FEATURES ■ Low Switching Losses At High Frequency ■ Fully Characterised For Operation Up To 20kHz APPLICATIONS ■ High Power Inverters And Choppers ■ UPS ■ AC Motor Drives ■ Induction Heating ■ Cycloconverters

OPTICALLY ISOLATED ERROR AMPLIFIER

Introduction The arm wrestling between voice and data has concluded in favor of the latter with all the major players now posturing for leadership of the migration from traditional voice to Internet Protocol (IP) telephony. On the short term the huge investments in both traditional telephony in

2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a