Silicon N-Channel Power MOSFET

Features： - Fast Switching - LowON Resistance(Rdson≤1.4Ω) - Low Gate Charge (Typical Data:24nC) - Low Reverse transfer capacitances(Typical:5.5pF) - 100%Single Pulse avalanche energy Test

Silicon N-Channel Power MOSFET

Features： - Fast Switching - LowON Resistance(Rdson≤1.4Ω) - Low Gate Charge (Typical Data:24nC) - Low Reverse transfer capacitances(Typical:5.5pF) - 100Single Pulse avalanche energy Test

高压MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：933.75 Kbytes Page：6 Pages

300V-900V NMOS

300V-900V NMOS

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：933.75 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：933.75 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：933.75 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：933.75 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：933.75 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：933.75 Kbytes Page：6 Pages

650V N-Channel Power MOSFET

Features ● RDS(ON)

7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET

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