| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CS70N06 | 70A,60V Heatsink Planar N-Channel Power MOSFET 文件:1.7475 Mbytes Page:7 Pages | THINKISEMI 思祁半导体 | ||
12V-300V NMOS | CRMICRO 华润微电子 | |||
MOS 场效应晶体管--低压MOSFET | CRMICRO 华润微电子 | |||
25A, 60V, 0.025 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching | INTERSIL | |||
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s | FAIRCHILD 仙童半导体 | |||
70A, 60V, 0.014 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching | INTERSIL | |||
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s | FAIRCHILD 仙童半导体 | |||
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s | INTERSIL |
CS70N06产品属性
- 类型
描述
- Polarity:
N
- VDS(V):
60
- ID(A):
70
- RDS(ON) at Vgs=10V_TYP(mΩ):
7.2
- RDS(ON) at Vgs=10V_MAX(mΩ):
10
- RDS(ON) at Vgs=4.5V_TYP(mΩ):
8.5
- RDS(ON) at Vgs=4.5V_MAX(mΩ):
13
- VGS(TH)_Min(V):
1
- VGS(TH)_Max(V):
2
- Qg_Typ(nC):
69.9
- Ciss_Typ(pF):
3219
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
华晶 |
15+ |
TO-220F |
650 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
华晶 |
23+ |
TO-220F |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
华晶 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
华晶 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
华晶 |
23+ |
TO-220F |
3150 |
原厂原装正品 |
CS70N06规格书下载地址
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DdatasheetPDF页码索引
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