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型号 功能描述 生产厂家 企业 LOGO 操作
RFG70N06

70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

FAIRCHILD

仙童半导体

RFG70N06

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

INTERSIL

RFG70N06

Isc N-Channel MOSFET Transistor

文件:324.52 Kbytes Page:2 Pages

ISC

无锡固电

RFG70N06

N-Channel 60 V (D-S) MOSFET

文件:969.22 Kbytes Page:8 Pages

VBSEMI

微碧半导体

RFG70N06

MOSFET N-CH 60V 70A TO-247

ONSEMI

安森美半导体

25A, 60V, 0.025 Ohm, N-Channel Power MOSFET

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching

INTERSIL

70A, 60V, 0.014 Ohm, N-Channel Power MOSFET

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching

INTERSIL

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

INTERSIL

70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

FAIRCHILD

仙童半导体

RFG70N06产品属性

  • 类型

    描述

  • 型号

    RFG70N06

  • 功能描述

    MOSFET TO-247 N-Ch Power

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-20 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
TO-247-3
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
HARRIS哈里斯
26+
管3P
890000
一级总代理商原厂原装大批量现货 一站式服务
HARRIS
2023+
TO-3P
50000
原装现货
HAR
23+
RFG70N06
13528
振宏微原装正品,假一罚百
FAIRCHILD
25+
TO-247
30000
代理全新原装现货,价格优势
FAIRCHILD
26+
TO-247
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
HARRIS
25+
TO3P
4500
全新原装、诚信经营、公司现货销售
INTERSIL
23+
TO-247
3000
原装正品假一罚百!可开增票!
哈里斯
17+
TO247
3996
全新 发货1-2天
24+
5000
公司存货

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