12V-300V NMOS

HiPerFET MOSFET ISOPLUS220TM

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to t

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space sav

HiPerRFTM Power MOSFETs

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance -

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space sav

HiPerRF Power MOSFET F-Class: MegaHertz Switching

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