HiPerFET™ MOSFET ISOPLUS220™

Electrically Isolated Back Surface

N-Channel Enhancement Mode

High dv/dt, Low trr, HDMOS™ Family

Features

• Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

• Low drain to tab capacitance(<35pF)

• Low RDS (on)

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS) rated

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers

• AC motor control

Advantages

• Easy assembly: no screws or isolation foils required

• Space savings

• High power density

• Low collector capacitance to ground (low EMI)