600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on state voltage drop

600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat

600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on state voltage drop

600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on state voltage drop

600V, SMPS Series N-Channel IGBT

The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat