| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CS11N90V | 平面MOSFET | CONVERT 锴威特 | ||
平面MOSFET | CONVERT 锴威特 | |||
900V N-Channel MOSFET This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanch | FAIRCHILD 仙童半导体 | |||
900V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand | FAIRCHILD 仙童半导体 | |||
900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w | FAIRCHILD 仙童半导体 | |||
HIPERFET Power MOSFTETs HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications. | IXYS 艾赛斯 | |||
HIPERFET Power MOSFTETs HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications. | IXYS 艾赛斯 |
CS11N90V产品属性
- 类型
描述
- Package:
TO3P
- Configuration:
single
- Type:
N
- ESD Diode:
No
- FRD Diode:
No
- VDS(V):
900
- VGS(±V):
30
- ID* (A) @25°C:
11
- RDS(ON) (mΩ)* atVGS=10Vtyp:
750
- RDS(ON) (mΩ)* atVGS=10Vmax:
960
- VGS(th) (V)min:
3
- VGS(th) (V)max:
4
- Ciss (pF):
2571
- Coss (pF):
244
- Crss (pF):
46
- Qg* (nC):
107
- Qgd (nC):
58.6
- Trr (ns):
530
- Qrr (uC):
2.4
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CS |
24+ |
SSOP24 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
CITIZEN |
24+ |
14000 |
|||||
25+ |
8 |
公司优势库存 热卖中! |
|||||
ON |
23+ |
SOP8 |
2 |
正规渠道,只有原装! |
|||
Convert Semiconductor(锴威特半 |
2447 |
TO-3PF |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
PULS |
24+ |
NA |
1026 |
进口原装正品优势供应 |
|||
原厂 |
20+ |
SOP-8 |
2960 |
诚信交易大量库存现货 |
|||
CS |
25+ |
SOP8 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON |
SOP8 |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
ON |
24+ |
SMD8 |
4652 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
CS11N90V芯片相关品牌
CS11N90V规格书下载地址
CS11N90V参数引脚图相关
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2020-3-10CS2001YDWF20-模拟集成电路
描述 CS2001是一种智能的电源专用集成电路在汽车使用安全气囊系统。它包含一个电流模式开关稳压器和一个1.2甲片上开关和一个5.0伏,100毫安线性稳压器。线性输出电容的ESR必须在范围更大的MF或3.3100毫瓦如果上限至1.0瓦特的ESR小于100毫瓦,一个系列电阻必须使用。切换台可以配置在任何一个推动或反激式拓扑。升压拓扑结构会产生能量储备VER的是外部电压可调(最高25伏特),通过电阻分压器连接到VFB引脚。在故障事件振动流化床生产条件或者开路或短路时,转换器是关闭。在正常工作条件下(VBAT的> 8.0 V)时,电流线性稳压器上装载直接通过VBAT的
2013-2-21
DdatasheetPDF页码索引
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