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11N90

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high

UTC

友顺

11N90

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

• 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V \n• High switching speed \n• Improved dv/dt capability \n• 100% avalanche tested \n• Halogen Free;

UTC

友顺

11N90

Fast Switching

文件:54.69 Kbytes Page:2 Pages

ISC

无锡固电

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high

UTC

友顺

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high

UTC

友顺

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high

UTC

友顺

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-Channel MOSFET Transistor

文件:201.7 Kbytes Page:2 Pages

ISC

无锡固电

900V N-Channel MOSFET

文件:823.6 Kbytes Page:8 Pages

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

文件:817.11 Kbytes Page:9 Pages

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:204.76 Kbytes Page:7 Pages

UTC

友顺

N-Channel MOSFET Transistor

文件:162.7 Kbytes Page:2 Pages

ISC

无锡固电

900V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanch

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FAIRCHILD

仙童半导体

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

FAIRCHILD

仙童半导体

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

IXYS

艾赛斯

11N90产品属性

  • 类型

    描述

  • Vdss(V):

    900

  • Vgss(V):

    30

  • Id(A):

    11

  • Package:

    TO-220/TO-220F1/TO-3...

更新时间:2026-5-20 14:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
26+
TO-3P
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
FSC
25+23+
TO-220
24435
绝对原装正品全新进口深圳现货
FUJ
2450+
TO-3P
9850
只做原装正品现货或订货假一赔十!
UTC/友顺
24+
NA
8000
只做原装,欢迎询价,量大价优
FSC
22+
TO-3P
8000
原装正品支持实单
UTC
25+
TO-247
20000
原装正品价格优惠,志同道合共谋发展
FUJ
15+
TO-3P
1540
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
2022+
TO-247
50000
原厂代理 终端免费提供样品
FUJ
23+
TO-3P
4040
原厂原装正品
UTC/友顺
23+
TO-220F
33500
原厂授权代理,海外优势订货渠道。可提供大量库存,详

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