DIMENSIONS SCHEMATIC & PC LAYOUT

SPECIFICATIONS Electrical Ratings 50mA @ 48VDC Electrical Life 100,000 cycles typical Contact Resistance

CIT SWITCH

[CIT SWITCH] SPECIFICATIONS Electrical Ratings 50mA @ 48VDC Electrical Life 100,000 cycles typical Contact Resistance

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SUB-MINIATURE SURFACE MOUNT TACT 开关 触摸开关

轻触开关

包装：散装 描述：SURFACE MOUNT GULL WING TACTILE 开关 触摸开关

轻触开关

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. • Inverter output current capability IO (No