POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

Power Transistors

Power Transistors TO-3 Case (Continued)

30 A, 120 V PNP Darlington Bipolar Power Transistor

The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices. • High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc\n• Monolithic Construction with Built-in Base Emitter Shunt Resistor\n• Junction Temperature to +200°C;

High-Current Complementary Silicon Transistors

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isc Silicon PNP Darlington Power Transistor

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SILICON PLANAR DARLINGTON POWER TRANSISTORS

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Silicon PNP Darlington Power Transistor

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COMPLEMENTARY SILICON POWER COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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High-Current Complementary Silicon Transistors

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Trans Darlington PNP 120V 30A 3-Pin(2+Tab) TO-3 Sleeve

BJT 双极性三极管

High-Current Complementary Silicon Transistors

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High-Current Complementary Silicon Transistors

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封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS PNP DARL 120V 30A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON PLANAR DARLINGTON POWER TRANSISTORS

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FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • Converter bridge for 3 phase AC-to-DC power conversion. • Circuit for dynamic braking of motor regenerative energy. • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. • Inverter output current capability IO (No