Silicon N-Channel Power MOSFET

General Description： CS100N03 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applicatio

Silicon N-Channel Power MOSFET

General Description： CS100N03 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applicatio

Silicon N-Channel Power MOSFET

General Description： CS100N03 A4-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applicatio

12V-300V NMOS

12V-300V NMOS

Rectifier Diodes

FEATURES High density cell design for ultra low Rps(on) ® Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ® Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation

N-Channel Enhancement Mode Power MOSFET

Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired

30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

N-Channel 30-V (D-S) MOSFET

文件：1.62203 Mbytes Page：7 Pages

90A竊?0V N-CHANNEL MOSFET

文件：212.13 Kbytes Page：5 Pages