RF Transistor

Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=10GHz typ (VCE=5V) • High gain : |S21e|2=14dB typ (f=1GHz) • Halogen free compliance

PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifi er

Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=10GHz typ (VCE=5V) • High gain : |S21e|2=14dB typ (f=1GHz) • Halogen free compliance

射频晶体管，NPN 单，12 V，100 mA，fT = 10 GHz

CPH6021 is RF Transistor, 12 V, 100 mA, fT = 10 GHz, NPN Single CPH6 for High-Frequency Low-Noise Amplifier. • Low-noise use: NF=1.2dB typ (f=1GHz)\n• High cut-off frequency: fT=10GHz typ (VCE=5V)\n• Forward transfer Gain=14dB typ (f=1GHz)\n• Halogen free compliance;

High-Frequency Low-Noise Amplifier

文件：572 Kbytes Page：12 Pages

RF Transistor

Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=10GHz typ (VCE=5V) • High gain : |S21e|2=14dB typ (f=1GHz) • Halogen free compliance

High-Frequency Low-Noise Amplifier

文件：572 Kbytes Page：12 Pages

封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：托盘 描述：RF TRANS NPN 12V 10GHZ 6CPH 分立半导体产品 晶体管 - 双极（BJT）- 射频

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

20V P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V

20V P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. Features • –28 A, –20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V