4 Pin SOP OptoMOS Relays

Description The CPC1150N is a miniature 1-Form-B solid state relay which uses optically coupled MOSFET technology to provide 1500Vrms of input to output isolation. The efficient MOSFET switches and photovoltaic die use Clare’s patented OptoMOS architecture. The optically coupled output is control

Single-Pole, Normally Closed 4-Pin SOP OptoMOS Relay

Description The CPC1150N is a miniature single-pole, normally closed (1-Form-B) solid state relay that uses optically coupled MOSFET technology to provide 1500Vrms of input to output isolation. Its optically coupled output, which uses the patented OptoMOS architecture, is controlled by a highly

Solid State Relays (MOSFET-type)

· Low drive current\n· High reliability\n· Optically Isolated Input and Output\n· No EMI/RFI generation\n· Arc-free with no snubbing circuits\n· Machine insertable, wave solderable\n· AC/DC switching\n· Current Limiting (Parts with \"L\" Suffix)\n· FCC compatible;

封装/外壳：4-SOP（0.150"，3.81mm） 包装：管件 描述：SSR RELAY SPST-NC 120MA 0-350V 继电器 固态继电器

封装/外壳：4-SOP（0.150"，3.81mm） 包装：管件 描述：SSR RELAY SPST-NC 120MA 0-350V 继电器 固态继电器

4-Pin SOP OptoMOS짰 Relay

文件：112.9 Kbytes Page：5 Pages

4 Pin SOP OptoMOS Relays

Description The CPC1150N is a miniature 1-Form-B solid state relay which uses optically coupled MOSFET technology to provide 1500Vrms of input to output isolation. The efficient MOSFET switches and photovoltaic die use Clare’s patented OptoMOS architecture. The optically coupled output is control

Single-Pole, Normally Closed 4-Pin SOP OptoMOS Relay

Description The CPC1150N is a miniature single-pole, normally closed (1-Form-B) solid state relay that uses optically coupled MOSFET technology to provide 1500Vrms of input to output isolation. Its optically coupled output, which uses the patented OptoMOS architecture, is controlled by a highly

4-Pin SOP OptoMOS짰 Relay

文件：112.9 Kbytes Page：5 Pages

4-Pin SOP OptoMOS짰 Relay

文件：112.9 Kbytes Page：5 Pages

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N