PNP - Silicon RF Transistor Die 50mA, 20 Volt

The CP681 is a silicon PNP RF transistor designed for general purpose RF amplifi er and mixer applications. MECHANICAL SPECIFICATIONS: Die Size 15 x 15 MILS Die Thickness 7.9 MILS Base Bonding Pad Area 2.3 MIL DIAMETER Emitter Bonding Pad Area 2.3 MIL DIAMETER Top Side Metaliz

PNP - Silicon RF Transistor Die 50mA, 20 Volt

20V,50mA,225mW Bare die,15.000 X 15.000 mils,Transistor-Small Signal (<=1A)

Chip Form: RF PNP Transistor

封装/外壳：模具 包装：带 描述：RF TRANS PNP 20V 600MHZ DIE 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：模具 包装：带 描述：RF TRANS PNP 20V 600MHZ DIE 分立半导体产品 晶体管 - 双极（BJT）- 射频

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1145 A Surge current 25 kA

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 6000 V Mean on-state current 840 A Surge current 10 kA

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

CATV amplifier module

DESCRIPTION Hybrid high dynamic range amplifier module designed for CATV systems operating over a frequency range of 40 to 600 MHz operating with a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold me