FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1145 A Surge current 25 kA

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1145 A Surge current 25 kA

FAST RECOVERY DIODE

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 6000 V Mean on-state current 840 A Surge current 10 kA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively

CATV amplifier module

DESCRIPTION Hybrid high dynamic range amplifier module designed for CATV systems operating over a frequency range of 40 to 600 MHz operating with a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold me