位置:首页 > IC中文资料 > BD681

BD681晶体管资料

  • BD681别名:BD681三极管、BD681晶体管、BD681晶体三极管

  • BD681生产厂家:德国AEG公司_美国摩托罗拉半导体公司_法国巴黎珊斯

  • BD681制作材料:Si-N+Darl+Di

  • BD681性质:低频或音频放大 (LF)_功率放大 (L)

  • BD681封装形式:直插封装

  • BD681极限工作电压:100V

  • BD681最大电流允许值:4A

  • BD681最大工作频率:>10MHZ

  • BD681引脚数:3

  • BD681最大耗散功率:40W

  • BD681放大倍数:β>750

  • BD681图片代号:B-21

  • BD681vtest:100

  • BD681htest:10000100

  • BD681atest:4

  • BD681wtest:40

  • BD681代换 BD681用什么型号代替:BD263B,FD50B,

BD681价格

参考价格:¥0.9153

型号:BD681 品牌:MULTICOMP 备注:这里有BD681多少钱,2026年最近7天走势,今日出价,今日竞价,BD681批发/采购报价,BD681行情走势销售排行榜,BD681报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BD681

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively

FAIRCHILD

仙童半导体

BD681

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

ONSEMI

安森美半导体

BD681

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

CDIL

BD681

NPN SILICON POWER DARLINGTON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER

CENTRAL

BD681

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682

COMSET

BD681

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications

ISC

无锡固电

BD681

Plastic Medium-Power Silicon NPN Darlingtons

This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc • Monolithic Construction • BD675. 675A, 677, 677A. 679, 679A, 68

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BD681

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications

SAVANTIC

BD681

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The BD681, are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-126 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD682, respectively.

TGS

BD681

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD681

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682

COMSET

BD681

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD681

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

STMICROELECTRONICS

意法半导体

BD681

NPN PLASTIC POWER DARLINGTON TRANSISTORS

NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684

TEL

BD681

中等功率 NPN 达林顿双极功率晶体管

The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications. • High DC Current GainhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc\n• Monolithic Construction\n• BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682\n• BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

BD681

互补硅功率达林顿晶体管

The devices are manufactured in planar base island technology with monolithic Darlington configuration. • Good hFE linearity \n• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode \n• High fT frequency;

STMICROELECTRONICS

意法半导体

BD681

NPN 晶体管

MTW

BD681

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN DARL 100V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

BD681

Silicon NPN Power Transistors

文件:230.99 Kbytes Page:3 Pages

FS

BD681

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN DARL 100V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BD681

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件:252.33 Kbytes Page:6 Pages

STMICROELECTRONICS

意法半导体

BD681

NPN SILICON POWER DARLINGTON TRANSISTOR

文件:332.11 Kbytes Page:2 Pages

CENTRAL

BD681

Plastic Medium?좵ower Silicon NPN Darlingtons

文件:109.23 Kbytes Page:4 Pages

ONSEMI

安森美半导体

BD681

Medium Power Linear and Switching Applications

文件:230.32 Kbytes Page:4 Pages

FAIRCHILD

仙童半导体

BD681

NPN Epitaxial Silicon Transistor

文件:230.32 Kbytes Page:4 Pages

FAIRCHILD

仙童半导体

BD681

Medium Power Linear and Switching Applications

文件:44.93 Kbytes Page:4 Pages

FAIRCHILD

仙童半导体

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682

COMSET

Plastic Medium?뭁ower Silicon NPN Darlingtons

This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A,

ONSEMI

安森美半导体

Plastic Medium-Power Silicon NPN Darlingtons

文件:87.33 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Medium Power Linear and Switching Applications

文件:44.93 Kbytes Page:4 Pages

FAIRCHILD

仙童半导体

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1145 A Surge current 25 kA

POSEICO

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 6000 V Mean on-state current 840 A Surge current 10 kA

POSEICO

CATV amplifier module

DESCRIPTION Hybrid high dynamic range amplifier module designed for CATV systems operating over a frequency range of 40 to 600 MHz operating with a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold me

PHILIPS

飞利浦

BD681产品属性

  • 类型

    描述

  • Marketing Status:

    Active

  • Grade:

    Industrial

  • Transistor Polarity:

    NPN

  • Collector-Emitter Voltage_max(V):

    100

  • Collector-Base Voltage_max(V):

    100

  • Collector Current_abs_max(A):

    4

  • Dc Current Gain_min:

    750

  • Test Condition for hFE (IC):

    1.5

  • Test Condition for hFE (VCE)_spec(V):

    3

  • VCE(sat)_max(V):

    2.5

  • Test Condition for VCE(sat) - IC:

    1.5

  • Test Condition for VCE(sat) - IB_spec(mA):

    30

更新时间:2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-126
907
原厂订货渠道,支持BOM配单一站式服务
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货BD681即刻询购立享优惠#长期有排单订
ON
21+
TO-225
6880
只做原装,质量保证
25+
16
公司现货库存
ST
23+
TO-126
10000
全网最低/原装现货
STM
23+
SOT-32-3 (TO-126-3)
7700
ON
24+
TO-225
8900
全新原装现货,假一罚十
ST(意法)
25+
SOT-32
22412
原装正品现货,原厂订货,可支持含税原型号开票。
ST
25+
SOT-32
6000
全新原装现货、诚信经营!
ON
24+
TO-225
13000
绝对原装现货,价格低,欢迎询购!

BD681数据表相关新闻