BD681晶体管资料
BD681别名:BD681三极管、BD681晶体管、BD681晶体三极管
BD681生产厂家:德国AEG公司_美国摩托罗拉半导体公司_法国巴黎珊斯
BD681制作材料:Si-N+Darl+Di
BD681性质:低频或音频放大 (LF)_功率放大 (L)
BD681封装形式:直插封装
BD681极限工作电压:100V
BD681最大电流允许值:4A
BD681最大工作频率:>10MHZ
BD681引脚数:3
BD681最大耗散功率:40W
BD681放大倍数:β>750
BD681图片代号:B-21
BD681vtest:100
BD681htest:10000100
- BD681atest:4
BD681wtest:40
BD681代换 BD681用什么型号代替:BD263B,FD50B,
BD681价格
参考价格:¥0.9153
型号:BD681 品牌:MULTICOMP 备注:这里有BD681多少钱,2026年最近7天走势,今日出价,今日竞价,BD681批发/采购报价,BD681行情走势销售排行榜,BD681报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD681 | Medium Power Linear and Switching Applications Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively | FAIRCHILD 仙童半导体 | ||
BD681 | Plastic Medium?뭁ower Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, | ONSEMI 安森美半导体 | ||
BD681 | NPN PLASTIC POWER DARLINGTON TRANSISTORS NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 | CDIL | ||
BD681 | NPN SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER | CENTRAL | ||
BD681 | SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682 | COMSET | ||
BD681 | Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications | ISC 无锡固电 | ||
BD681 | Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc • Monolithic Construction • BD675. 675A, 677, 677A. 679, 679A, 68 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
BD681 | Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications | SAVANTIC | ||
BD681 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BD681, are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-126 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD682, respectively. | TGS | ||
BD681 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | ||
BD681 | SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682 | COMSET | ||
BD681 | Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | ||
BD681 | Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | ||
BD681 | NPN PLASTIC POWER DARLINGTON TRANSISTORS NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 | TEL | ||
BD681 | 中等功率 NPN 达林顿双极功率晶体管 The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications. • High DC Current GainhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc\n• Monolithic Construction\n• BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682\n• BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803\n• Pb-Free Packages are Available; | ONSEMI 安森美半导体 | ||
BD681 | 互补硅功率达林顿晶体管 The devices are manufactured in planar base island technology with monolithic Darlington configuration. • Good hFE linearity \n• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode \n• High fT frequency; | STMICROELECTRONICS 意法半导体 | ||
BD681 | NPN 晶体管 | MTW | ||
BD681 | 封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN DARL 100V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICS 意法半导体 | ||
BD681 | Silicon NPN Power Transistors 文件:230.99 Kbytes Page:3 Pages | FS | ||
BD681 | 封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN DARL 100V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
BD681 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件:252.33 Kbytes Page:6 Pages | STMICROELECTRONICS 意法半导体 | ||
BD681 | NPN SILICON POWER DARLINGTON TRANSISTOR 文件:332.11 Kbytes Page:2 Pages | CENTRAL | ||
BD681 | Plastic Medium?좵ower Silicon NPN Darlingtons 文件:109.23 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | ||
BD681 | Medium Power Linear and Switching Applications 文件:230.32 Kbytes Page:4 Pages | FAIRCHILD 仙童半导体 | ||
BD681 | NPN Epitaxial Silicon Transistor 文件:230.32 Kbytes Page:4 Pages | FAIRCHILD 仙童半导体 | ||
BD681 | Medium Power Linear and Switching Applications 文件:44.93 Kbytes Page:4 Pages | FAIRCHILD 仙童半导体 | ||
SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682 | COMSET | |||
Plastic Medium?뭁ower Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, | ONSEMI 安森美半导体 | |||
Plastic Medium-Power Silicon NPN Darlingtons 文件:87.33 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Medium Power Linear and Switching Applications 文件:44.93 Kbytes Page:4 Pages | FAIRCHILD 仙童半导体 | |||
FAST RECOVERY DIODE FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1145 A Surge current 25 kA | POSEICO | |||
PHASE CONTROL THYRISTOR PHASE CONTROL THYRISTOR Repetitive voltage up to 6000 V Mean on-state current 840 A Surge current 10 kA | POSEICO | |||
CATV amplifier module DESCRIPTION Hybrid high dynamic range amplifier module designed for CATV systems operating over a frequency range of 40 to 600 MHz operating with a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold me | PHILIPS 飞利浦 |
BD681产品属性
- 类型
描述
- Marketing Status:
Active
- Grade:
Industrial
- Transistor Polarity:
NPN
- Collector-Emitter Voltage_max(V):
100
- Collector-Base Voltage_max(V):
100
- Collector Current_abs_max(A):
4
- Dc Current Gain_min:
750
- Test Condition for hFE (IC):
1.5
- Test Condition for hFE (VCE)_spec(V):
3
- VCE(sat)_max(V):
2.5
- Test Condition for VCE(sat) - IC:
1.5
- Test Condition for VCE(sat) - IB_spec(mA):
30
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-126 |
907 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMI/安森美 |
25+ |
TO-126 |
45000 |
ONSEMI/安森美全新现货BD681即刻询购立享优惠#长期有排单订 |
|||
ON |
21+ |
TO-225 |
6880 |
只做原装,质量保证 |
|||
25+ |
16 |
公司现货库存 |
|||||
ST |
23+ |
TO-126 |
10000 |
全网最低/原装现货 |
|||
STM |
23+ |
SOT-32-3 (TO-126-3) |
7700 |
||||
ON |
24+ |
TO-225 |
8900 |
全新原装现货,假一罚十 |
|||
ST(意法) |
25+ |
SOT-32 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST |
25+ |
SOT-32 |
6000 |
全新原装现货、诚信经营! |
|||
ON |
24+ |
TO-225 |
13000 |
绝对原装现货,价格低,欢迎询购! |
BD681芯片相关品牌
BD681规格书下载地址
BD681参数引脚图相关
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- BD662K
- BD662
- BD661K
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- BD652F
- BD652
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- BD650F
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- BD649F
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