Power Transistor PNP - Darlington Chip

PROCESS DETAILS Process EPITAXIAL BASE Die Size 195 X 195 MILS Die Thickness 12 MILS Base Bonding Pad Area 29 X 29 MILS Emitter Bonding Pad Area 61 X 35 MILS Top Side Metalization AI - 30,000Å Back Side Metalization Ti/Ni/Au - 6,000Å

Power Transistor PNP - Darlington Chip

NPN Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Through Hole Package • 150°C Junction Temperature • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix

For measurement of electrical conductivity, dissolved solids and temperature in fresh water

Key Features On-line calculation of electrical conductivity Direct connection to datalogger Cable length up to 300m Can be used with multiplexers Typical Applications Water quality monitoring Calculation of stream discharge rate Tracking of water-borne pollutants in aquifers Descripti

Optional Device Lifter for Easy Package Removal

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Pipe Thread Sealant Tape 547, 1/4 in x 36 yds (6,3 mm x 32,9 m), Boxed

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Customer Specification

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