Small Signal Transistor NPN- Silicon Darlington Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 4.2 x 4.2 MILS Emitter Bonding Pad Area 4.3 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 13,000Å

Small Signal Transistor NPN- Silicon Darlington Transistor Chip

NPN - Darlington Transistor Die 0.5 Amp, 80 Volt

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NPN - Darlington Transistor Die 0.5 Amp, 100 Volt

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Chip Form: High Voltage Darlington Chip Central Semiconductor

TLV803E, TLV809E, TLV810E Low Power 250-nA IQ and Small Size Supply Voltage Supervisors

1 Features • Ensured RESET/RESET for VDD = 0.7 V to 6 V • Fixed time delay: 40 μs, 10 ms, 50 ms, 100 ms, 200 ms, 400 ms • Supply current (IDD): 250 nA (typical) – 1 μA (maximum for VDD = 3.3 V) • Output topology: – TLV809E: push-pull, active-low – TLV803E: open-drain, active-low – TLV810E

Wiha ComfortGrip Pliers

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Socket terminal strip Screw connection

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INTERCONNECTS 2,54 Grid Solder Cup Headers and Sockets Single and Double Row

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Compliant with European standards European standards power relays

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